Method of producing exchange coupling film and method of producing magnetoresistive sensor by using the exchange coupling film
AssigneeAlps Electric Co., Ltd.
InventorsMasamichi Saito, Naoya Hasegawa, Yosuke Ide, Kenichi Tanaka
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Abstract
An exchange coupling film includes a first antiferromagnetic layer formed on a pinned magnetic layer, and a second antiferromagnetic layer formed thereon. A composition ratio of an element X in the first antiferromagnetic layer is larger than that of the second antiferromagnetic layer. Preferably, a non-aligned state is created at an interface between the first antiferromagnetic layer and the pinned magnetic layer, whereby a large exchange coupling magnetic field is obtained upon heat-treatment.
Claims78
A method of producing an exchange coupling film comprising:
- forming a first antiferromagnetic layer which contacts a ferromagnetic layer at an interface therebetween, and forming a second antiferromagnetic layer which contacts the first antiferromagnetic layer, the first and second antiferromagnetic layers comprising an element X and Mn, wherein the element X is selected from the group consisting of Pt, Pd, Ir, Rh, Ru, Os, and combinations thereof, such that a composition ratio of the element X of the second antiferromagnetic layer is smaller than a composition ratio of the element X of the first antiferromagnetic layer;
- and
- effecting a heat-treatment such that an exchange coupling magnetic field is developed at the interface between the first antiferromagnetic layer and the ferromagnetic layer.
A method of producing an exchange coupling film comprising:
- forming a first antiferromagnetic layer which contacts a ferromagnetic layer at an interface therebetween, and forming a second antiferromagnetic layer which contacts the first antiferromagnetic layer, the first and second antiferromagnetic layers comprising an element X, an element X′ and Mn, wherein the element X is selected from the group consisting of Pt, Pd, Ir, Rh, Ru, Os, and combinations thereof, and the element X′ selected from the group consisting of Ne, Ar, Kr, Xe, Be, B, C, N, Mg, Al, Si, P, Ti, V, Cr, Fe, Co, Ni, Cu, Zn, Ga, Ge, Zr, Nb, Mo, Ag, Cd, Sn, Hf, Ta, W, Re, Au, Pb, a rare earth element, and combinations thereof, such that a composition ratio of the elements X+X′ of the second antiferromagnetic layer is smaller than a composition ratio of the elements X+X′ of the first antiferromagnetic layer;
- and
- effecting a heat-treatment such that an exchange coupling magnetic field is developed at the interface between the first antiferromagnetic layer and the ferromagnetic layer.
A method of producing an exchange coupling film which develops an exchange coupling magnetic field at an interface between an antiferromagnetic layer and a ferromagnetic layer, the method comprising:
- forming the ferromagnetic layer;
- forming the antiferromagnetic layer on the ferromagnetic layer by a sputtering process in which an element X and Mn are used as sputtering targets, wherein the element X is selected from the group consisting of Pt, Pd, Ir, Rh, Ru, Os, and combinations thereof, and wherein a sputtering gas pressure is progressively increased in a direction away from the ferromagnetic layer during the forming of the antiferromagnetic layer, such that a composition ratio of the element X is reduced in a direction away from the ferromagnetic layer;
- and
- effecting a heat-treatment after forming the antiferromagnetic layer and the ferromagnetic layer, such that an exchange coupling magnetic field is developed at the interface between the antiferromagnetic layer and the ferromagnetic layer.
Dependencies are inferred from the claim text.