Method for producing a light-emitting semiconductor device

A method for producing a light-emitting device using gallium nitride group compound semiconductor, comprising the steps of:

• setting a mixing ratio of a silicon-containing gas and other raw material gases during said vapor phase epitaxy at a desired value in a range which increases substantially in proportion to an electron concentration of said gallium nitride group compound semiconductor so as to control a carrier concentration of said gallium nitride group compound semiconductor at a desired value;
• and
• forming said gallium nitride group compound semiconductor by feeding said silicon-containing gas and other raw material gases at a mixing ratio set above.

A method for producing a light-emitting device using gallium nitride group compound semiconductor by an organometallic compound vapor phase epitaxy, comprising the steps of:

• setting a supplying rate of silicon (Si) to gallium (Ga) in a reaction chamber during said vapor phase epitaxy at a desired value in a range from 0.1 to 3 as a converted values so as to control a conductivity (1/resistivity) of said gallium nitride group compound semiconductor at a desired value, where said values 0.1 and 3 are the values obtained from gas flow rates, in case that an amount of said gallium (Ga) is converted into a flow rate of hydrogen bubbling trimethyl gallium (TMG) at a temperature of −15° C. and an amount of said silicon (Si) is converted into a flow rate of a gas diluted to 0.86 ppm.

A method for producing a light-emitting device using gallium nitride group compound semiconductor by an organometallic compound vapor phase epitaxy, comprising the steps of:

• setting a supplying rate of silicon (Si) to NH3, in a reaction chamber during said vapor phase epitaxy at a desired value in a range from 8.6×10−10 to 2.6×10−8, so as to control a conductivity (1/resistivity) of said gallium nitride group compound semiconductor at a desired value.

A method for producing a light-emitting device using gallium nitride group compound semiconductor by an organometallic compound vapor phase epitaxy, comprising the steps of:

• setting a supplying rate of silicon (Si) to gallium (Ga) in a reaction chamber during said vapor phase epitaxy at a desired value in a range from 0.1 to 3 as a converted values so as to control a carrier concentration of said gallium nitride group compound semiconductor at a desired value, where said values 0.1 and 3 are the values obtained from gas flow rates, in case that an amount of said gallium (Ga) is converted into a flow rate of hydrogen bubbling trimethyl gallium (TMG) at a temperature of −15° C. and an amount of said silicon (Si) is converted into a flow rate of a gas diluted to 0.86 ppm.

A method for producing a light-emitting device using gallium nitride group compound semiconductor by an organometallic compound vapor phase epitaxy, comprising the steps of:

• setting a supplying rate of silicon (Si) to NH3 in a reaction chamber during said vapor phase epitaxy at a desired value in a range from 8.6×10−10 to 2.6×10−8, so as to control a carrier concentration of said gallium nitride group compound semiconductor at a desired value.