Method of manufacturing a mono-crystalline silicon ball
AssigneeAgency of Industrial Science and Technology
InventorsKazuhiko Kuribayashi, Tomotsugu Aoyama
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Abstract
When a crystalline nucleus generated from an under-cooled silicon droplet is grown up to a mono-crystalline silicon ball, a critical under-cooling ΔTcr is determined in response to a diameter d of the silicon droplet so as to satisfy the relationships of (d=5 mm, ΔTcr=100K), (d=3 mm, ΔTcr=120K) and (d=1 mm, ΔTcr=150K). A crystal grown up from the crystalline nucleus at an under-cooling ΔT less than the critical under-cooling ΔTcr is a mono-crystalline silicon ball with high quality free from cracks or twins.
Claims2
A method of manufacturing a mono-crystalline silicon ball, which comprises:
- generating a solidification nucleus from an under-cooled silicon droplet by controlling an under-cooling ΔT on the basis of a critical under-cooling ΔTcr in correspondence with a diameter d of the silicon droplet;
- and
- growing mono-crystalline silicon to a sphere shape from the solidification nucleus at the under-cooling ΔT less than the critical under-cooling ≢Tcr.
A method of manufacturing a mono-crystalline silicon ball, which comprises:
- generating a solidification nucleus from an under-cooled silicon droplet, under the condition that a critical under-cooling ΔTcr is determined in response to a diameter d of said silicon droplet so as to satisfy the relationships of (d=5 mm, ΔTcr=100K), (d=3 mm, ΔTcr120K) and (d=1 mm, ΔTcr150K) between said critical under-cooling ΔTcr and said diameter d;
- and
- growing mono-crystalline silicon to a sphere shape from said solidification nucleus at an under-cooling ΔT less than said critical under-cooling ΔTcr.
Dependencies are inferred from the claim text.