Back to results
US 6,606,336 B2Granted
Photonic semiconductor device
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorKeisuke Matsumoto
Life of this patent
Estimating the term…
Abstract
A semiconductor laser device includes a combiner including a multi-mode interference wave-guide for connecting a laser unit with a light modulator of an output unit. The laser unit includes single wavelength semiconductor lasers, each laser producing a different wavelength. The lasers and the combiner are covered with and buried in a burying semiconductor layer having the same composition as that of current blocking structures in the laser unit
Claims10
A photonic semiconductor device comprising:
- a semiconductor substrate;
- a laser unit including a plurality of single wavelength semiconductor lasers, each single wavelength laser producing light of a respective and different wavelength and comprising an optical waveguide ridge including an active layer sandwiched by a pair of current blocking structures, each current blocking structure including, serially disposed with respect to said semiconductor substrate, first and second semiconductor layers;
- an output unit having a first waveguide layer, sandwiched by a first upper cladding layer and a first lower cladding layer, and outputting laser light produced by said laser unit;
- a combiner unit having a second waveguide layer sandwiched by a second upper cladding layer and a second lower cladding layer, and having a first end abutting said laser unit and a second end abutting said output unit, said semiconductor substrate carrying said laser unit, said output unit, and said combiner unit;
- and
- a burying semiconductor layer structure including said first and second semiconductor layers, said first semiconductor layer completely covering and burying said combiner unit and said second semiconductor layer completely covering said first semiconductor layer opposite said combiner unit.
3 more elements
Dependencies are inferred from the claim text.