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US 6,606,334 B1Granted
Semiconductor laser
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsKimio Shigihara, Kazushige Kawasaki
Life of this patent
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Abstract
A semiconductor laser that has a large laser light aspect ratio, a high kink level, and a small variation in optical output efficiency. A semiconductor laser in which an increase in threshold current and a reduction in the optical output efficiency at an elevated temperature are prevented. The semiconductor laser includes a low refractive index layer between a guide layer and a cladding layer, and the total layer thickness of an active layer and the guide layer is not less than about 15% of an oscillation wavelength.
Claims20
A semiconductor laser comprising:
- a semiconductor substrate;
- and
- a laminated structure on the semiconductor substrate and including:
- an active layer having first and second sides;
- a first guide layer having a refractive index and laminated on the first side of the active layer;
- a first cladding layer having a refractive index, laminated on the first guide layer, and including a current constriction portion;
- a second guide layer having a refractive index smaller than the refractive index of the first guide layer and laminated on the second side of the active layer;
- and
- a second cladding layer laminated on the second guide layer and having a refractive index higher than the refractive index of the first cladding layer, so that light emitted by the semiconductor laser has an intensity distribution having a maximum intensity aligned with the active layer.
6 more elements
A semiconductor laser comprising:
- a GaAs substrate;
- and
- a laminated structure disposed on the GaAs substrate and including:
- an InxGa1−xAs (0<x<0.3) active layer having first and second sides;
- a first guide layer laminated on the first side of the active layer;
- a first cladding layer laminated on the first guide layer and including a current constriction portion;
- and
- a second guide layer and a second cladding layer laminated in order on the second side of the active layer, wherein a normalized frequency of the first guide layer is higher than a normalized frequency of the second guide layer.
5 more elements
Dependencies are inferred from the claim text.