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US 6,606,333 B2Granted
Semiconductor photonic device
AssigneeMurata Manufacturing Co., Ltd.
InventorMichio Kadota
Life of this patent
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Abstract
A semiconductor photonic device includes: a substrate; a ZnO buffer layer provided on the substrate; and an InxGayAlzN compound semiconductor layer provided on the ZnO layer, where x+y+z=1, 0≦x≦1, 0≦y≦1, 0≦z≦1, and wherein the ZnO buffer layer excludes, as a constituent element, an element of the InxGayAlzN compound semiconductor. Preferably, the ZnO buffer layer is doped with B, Sc, Y, La, Ac, Tl, V, Nb, Ta, P, As, Sb or Bi.
Claims5
A semiconductor photonic device comprising:
- a silicon substrate having low resistivity;
- a ZnO buffer layer provided on the substrate;
- and
- an InxGayAlzN compound semiconductor layer provided on the ZnO layer, where x+y+z=1, 0≦x≦1, 0≦y≦1, 0≦z≦1, and wherein the ZnO buffer layer does not include, as a dopant, any element of the InxGayAlzN compound semiconductor.
1 more element
Dependencies are inferred from the claim text.