Programmable circuit and its method of operation
AssigneeMicron Technology, Inc.
InventorGreg A. Blodgett
Life of this patent
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Abstract
A programmable circuit and its method of operation are disclosed in which a transistor is used as a programmable element. The transistor may be programmed to one of two different gate threshold voltage values for operation. During reading of the transistor, a gate threshold voltage between the two values is applied and the status of the transistor as on or off is determined to determine the program state of the transistor. The program state of the transistor can be determined by a simple latch circuit.
Claims17
A method of operating a programmable circuit comprising:
- causing a gate threshold voltage of a programmable transistor to move from one of a first voltage and a second voltage to the other of said first voltage and said second voltage by applying respective predetermined voltages to a gate and a drain terminal of said programmable transistor;
- and
- latching a latch circuit adapted to serve in place of a fuse or anti-fuse depending on said gate threshold voltage of said programmable transistor.
A switching device comprising:
- a transistor having a source, a drain, and a gate;
- a signal line operatively connected to said gate, said transistor adapted to provide a conductive path between said source and said drain in response to a first electrical signal applied on said signal line having a magnitude above an operating threshold magnitude, said operating threshold magnitude adapted to be modified from a first voltage to a second voltage in response to a second electrical signal applied between said drain and said gate;
- and
- a latch circuit having an input coupled to said source of said transistor and an output adapted to serve in place of an output of a fuse or anti-fuse.
A method of operating a programmable circuit comprising:
- switchingly applying a programming voltage between a gate and a drain of a field effect transistor whereby an initial threshold voltage of said transistor is modified to a programmed threshold voltage of the transistor and the transistor is programmed into a programmed state;
- applying a first test voltage to said gate of said transistor;
- sensing a conductivity of said transistor;
- and
- latching a latch circuit coupled to a source of said transistor based on said conductivity of said transistor.
A method of operating a programmable circuit comprising:
- applying a first test voltage to a gate of a field effect transistor and flowing a test current between a drain and a source of said transistor, said transistor adapted to exhibit one of at least a first and a second programmed state, such that a responsive voltage responsive to said test voltage and said test current appears across said transistor, said responsive voltage having a first magnitude if said transistor exhibits said first programmed state and a second magnitude if said transistor exhibits said second programmed state;
- and
- causing said transistor to transition from said first programmed state to said second programmed state by applying a programming voltage between said drain and said gate of said transistor.
A method of operating a programmable circuit comprising:
- applying a first test voltage between a gate and a drain of a field effect transistor and a second test voltage between said drain and a source of said transistor, said transistor adapted to exhibit one of at least two programmed states, such that a responsive current responsive to said first and second test voltages flows through said transistor, said responsive current having a first magnitude if said transistor exhibits a first programmed state of said at least two states and a second magnitude if said transistor occupies a second programmed state of said at least two states;
- and
- causing said transistor to transition from said first programmed state to said second programmed state by applying a third programming voltage between said drain and said gate of said transistor.
A method of operating a programmable circuit comprising:
- providing first and second field effect transistors having substantially identical initial threshold voltages;
- switchingly applying a programming voltage between a first gate of said first transistor and a first drain of said first transistor, whereby said initial threshold voltage of said first transistor is modified to a programmed threshold voltage, whereby said first transistor is programmed;
- applying a first test voltage between said first gate and said first drain of said first transistor;
- applying said first test voltage between a second gate and a second drain of said second transistor;
- and
- sensing respective conductivities of said first and second transistors to indicate that said first transistor is programmed and said second transistor is not programmed.
A method of operating a programmable circuit comprising:
- charging a directly externally coupled gate of a field effect transistor from a first electrical potential to a second electrical potential with respect to a channel region of said transistor whereby said directly externally a coupled gate is modified so that an initial threshold voltage of said transistor is modified to a programmed threshold voltage of the transistor and the transistor is programmed into a programmed state;
- applying a first test voltage to said directly externally coupled gate of said transistor;
- and
- detecting said programmed state of said transistor.
Dependencies are inferred from the claim text.