Boosted voltage generating circuit and semiconductor memory device having the same

A boosted voltage generating circuit comprising:

• a first voltage output circuit supplied with a first voltage, for outputting a second voltage obtained by boosting the first voltage;
• a second voltage output circuit coupled with said first voltage output circuit, for generating a third voltage whose voltage value is smaller than the value of the second voltage and which is variably set to at least two values based on the second voltage;
• and
• an equalizer circuit coupled with said first and second voltage output circuits, for short-circuiting an output node of the second voltage and an output node of the third voltage in response to a first control signal,
• wherein said equalizer circuit starts an operation for short-circuiting the output node of the second voltage and the output node of the third voltage when the boosting operation is started by said first voltage output circuit, and terminates the short-circuiting operation after the boosting operation was started and the second voltage reached a predetermined value.