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US 6,605,933 B2Granted
Power metal oxide semiconductor integrated circuit
AssigneeNEC Electronics Corporation
InventorAkio Hosokawa
Life of this patent
Estimating the term…
Abstract
A semiconductor device including: a load connected between outputs of power amplifiers; a mirror current generating circuit connected to the power amplifiers in an output side of the power amplifiers for generating a mirror current which is smaller than and proportional to a load current applied to the load, and the mirror current generating circuit being connected out of a current path through the load between the outputs of the power amplifiers; and a mirror current detecting circuit connected to the mirror current generating circuit for detecting the mirror current.
Claims5
A semiconductor device comprising:
- a load connected between outputs of power amplifiers;
- a mirror current generating circuit connected to said power amplifiers in an output side of said power amplifiers for generating a mirror current which is smaller than and proportional to a load current applied to said load, and said mirror current generating circuit being connected out of a current path through said load between said outputs of said power amplifiers;
- and
- a mirror current detecting circuit connected to said mirror current generating circuit for detecting said mirror current.
1 more element
Dependencies are inferred from the claim text.