Insulating substrate including multilevel insulative ceramic layers joined with an intermediate layer

A module semiconductor device comprising:

• insulative ceramic layers having shapes which are substantially identical to each other, laid one upon another;
• an intermediate layer arranged between adjacent ones of the ceramic layers to join the adjacent ceramic layers to each other;
• a first conductive layer electrically separated from the intermediate layer, joined to the top surface of a top one of the ceramic layers;
• a second conductive layer electrically separated from the intermediate layer, joined to the bottom surface of a bottom one of the ceramic layers;
• semiconductor chips joined to the top surface of the first conductive layer;
• and
• a base joined to the bottom surface of the second conductive layer,
• wherein end faces of the ceramic layers are protruded from corresponding end faces of the first and second conductive layers and the intermediate layer.

An insulating substrate comprising:

• insulative ceramic layers having shapes which are substantially identical to each other, said ceramic layers laid one upon another and made of aluminum nitride;
• an intermediate layer arranged between adjacent ones of the ceramic layers to join the adjacent ceramic layers to each other, said intermediate layer made of a material selected from the group consisting of copper, aluminum, silver, gold, tungsten and molybdenum;
• a first conductive layer electrically separated from the intermediate layer and joined to the top surface of a top one of the ceramic layers, said first conductive layer made of a material selected from the group consisting of copper, aluminum, silver, and gold;
• and
• a second conductive layer electrically separated from the intermediate layer and joined to the bottom surface of a bottom one of the ceramic layers, said second conductive layer made of a material selected from the group consisting of copper, aluminum, silver, and gold,
• wherein end faces of the ceramic layers are protruded from corresponding end faces of the first and second conductive layers and the intermediate layer.

A module semiconductor device comprising:

• insulative ceramic layers having shapes which are substantially identical to each other, said ceramic layer laid one upon another and made of aluminum nitride;
• an intermediate layer arranged between adjacent ones of the ceramic layers to join the adjacent ceramic layers to each other, said intermediate layer made of a material selected from the group consisting of copper, aluminum, silver, gold, tungsten and molybdenum;
• a first conductive layer electrically separated from the intermediate layer and joined to the top surface of a top one of the ceramic layers, said first conductive layer made of a material selected from the group consisting of copper, aluminum, silver, and gold;
• a second conductive layer electrically separated from the intermediate layer and joined to the bottom surface of a bottom one of the ceramic layers, said second conductive layer made of a material selected from the group consisting of copper, aluminum, silver, and gold;
• semiconductor chips joined to the top surface of the first conductive layer;
• and
• a base joined to the bottom surface of the second conductive layer,
• wherein end faces of the ceramic layers are protruded from corresponding end faces of the first and second conductive layers and the intermediate layer.