Low k film application for interlevel dielectric and method of cleaning etched features

A cleaning composition, comprising:

• an aqueous solution comprising about 10 to about 40 wt % trimethylammonium fluoride to selectively etch an dielectric antireflective coating layer overlying a low k dielectric layer;
• the dielectric antireflective coating layer comprising a silicon-rich oxynitride or silicon-rich oxide.

A cleaning composition, comprising:

• an aqueous solution comprising about 10 to about 40 wt % trimethylammonium fluoride to selectively etch a dielectric antireflective coating layer overlying a low k dielectric layer.

A cleaning composition comprising:

• an aqueous solution comprising one or more cleaning agents to selectively remove a dielectric antireflective coating layer overlying a dielectric layer at an etch rate of the dielectric antireflective coating layer to the dielectric layer that is greater than the etch rate of the dielectric antireflective coating layer to a TEOS layer;
• the one or more cleaning agents comprising trimethylammonium fluoride.

A cleaning composition comprising:

• an aqueous solution comprising one or more cleaning agents to selectively remove a dielectric antireflective coating layer overlying a dielectric layer at an etch rate ratio of the dielectric antireflective coating layer to the dielectric layer of greater than 2:1;
• the one or more cleaning agents comprising trimethylammonium fluoride.

A cleaning composition comprising:

• an aqueous solution comprising trimethylammonium fluoride to selectively remove a dielectric antireflective coating layer overlying a dielectric layer with substantially no etching of the dielectric layer at an etch rate ratio of the dielectric antireflective coating layer to the dielectric layer of greater than 2:1.

A cleaning composition comprising:

• an aqueous solution comprising trimethylammonium fluoride to selectively remove a dielectric antireflectilve coating layer overlying a dielectric layer at an etch rate ratio of the dielectric antireflective coating layer to the dielectric layer of greater than 2:1, and less than about 50 angstroms of the dielectric layer during an about 1 to an about 15 minute period.

A cleaning composition comprising:

• an aqueous solution comprising about 10 to about 40 wt % of trimethylammonium fluoride and about 0 to about 10 wt % hydrogen fluoride to selectively remove a dielectric antireflective coating layer overlying a dielectric layer at an etch rate ratio of the dielectric antireflective coating layer to the dielectric layer of greater than 2:1, and less than about 50 angstroms of the dielectric layer during an about 1 to an about 15 minute period.

A cleaning composition comprising:

• an aqueous solution comprising about 10 to about 40 wt % of trimethylammonium fluoride and about 0 to about 25 wt % trimethylammonium hydroxide to selectively remove a dielectric antireflective coating layer overlying a dielectric layer at an etch rate ratio of the dielectric antireflective coating layer to the dielectric layer of greater than 2:1, and less than about 50 angstroms of the dielectric layer during an about 1 to an about 15 minute period.

A cleaning composition comprising:

• an aqueous solution comprising trimethylammonium fluoride to selectively remove a dielectric antireflective coating layer overlying a dielectric layer at an etch rate of the dielectric antireflective coating layer to the dielectric layer greater than 5:1.

A cleaning composition comprising:

• an aqueous solution comprising trimethylammonium fluoride to selectively remove a dielectric antireflective coating layer comprising silicon-rich oxynitride or a silicon-rich oxide overlying a low k dielectric layer at an etch rate of the dielectric antireflective coating layer to the dielectric layer greater than 5:1.

A cleaning composition comprising:

• an aqueous solution comprising trimethylammonium fluoride to selectively remove a dielectric antireflective coating layer comprising silicon-rich oxynitride or a silicon-rich oxide overlying a carbon-doped low k dielectric layer at an etch rate of the dielectric antireflective coating layer to the dielectric layer greater than 5:1.

A cleaning composition, comprising:

• an aqueous solution comprising about 10 to about 40 wt % trimethylammonium fluoride to selectively etch a dielectric antireflective coating layer overlying a dielectric layer.

A cleaning composition, comprising:

• an aqueous solution comprising trimethylammonium fluoride to selectively remove a dielectric antireflective coating layer overlying a dielectric layer.

A cleaning composition, comprising:

• an aqueous solution comprising trimethylammonium fluoride to selectively remove a dielectric antireflective coating layer overlying a dielectric layer at an etch rate ratio of the dielectric antireflective coating layer to the dielectric layer of greater than 2:1.

An aqueous cleaning solution, comprising:

• a cleaning agent in an amount effective to selectively remove a dielectric antireflective coating layer overlying a dielectric layer;
• the cleaning agent comprising trimethylammonium fluoride.

An aqueous cleaning solution, comprising:

• a cleaning agent in an amount effective to selectively remove a dielectric antireflective coating layer overlying a dielectric layer;
• the cleaning agent comprising trimethylammonium fluoride and, optionally, hydrogen fluoride or trimethylammonium hydroxide.

An aqueous cleaning solution, comprising:

• a cleaning agent in an amount effective to selectively remove a dielectric antireflective coating layer overlying a dielectric layer;
• the cleaning agent selected from the group consisting of trimethylammonium fluoride, trimethylammonium fluoride and hydrogen fluoride, and trimethylammonium fluoride and trimethylammonium hydroxide.