Schottky diode with bump electrodes

A semiconductor device constituting a diode which has a semiconductor substrate having one main surface and the other main surface opposite to the one main surface, and an anode electrode and a cathode electrode formed over said one main surface,

• wherein said semiconductor substrate has an intrinsic epitaxial layer and an n-type semiconductor layer positioned under said epitaxial layer;
• said anode electrode is connected to a high-density p+-type region selectively formed in said epitaxial layer;
• said cathode electrode has one portion connected to said n-type semiconductor layer exposed by selectively removing said epitaxial layer;
• and
• said cathode electrode has a plane area larger than said anode electrode.

A semiconductor device constituting a diode which has a semiconductor substrate having one main surface and the other main surface opposite to the one main surface, and an anode electrode and a cathode electrode formed over said one main surface,

• wherein said semiconductor substrate has a first conductive type epitaxial layer and a first conductive type semiconductor layer positioned under said epitaxial layer;
• said cathode electrode has one portion connected to said first conductive type semiconductor layer exposed by selectively removing said epitaxial layer;
• said cathode electrode has the other portion extending onto said epitaxial layer;
• and
• said anode electrode is selectively connected to one portion of said epitaxial layer to which said cathode electrode does not extend to thereby construct a Schottky barrier.

A semiconductor device constituting a diode having a cathode electrode and an anode electrode on one main surface of a semiconductor substrate,

• wherein said cathode electrode has a plane area larger than said anode electrode;
• a plurality of electrode bumps each connected to said cathode electrode and said anode electrode is provided;
• and
• said one main surface except for the top of said electrode bump and at least one part of the side face of said semiconductor substrate are covered with an insulating film.

A semiconductor device constituting a diode which has a semiconductor substrate having one main surface and the other main surface opposite to the one main surface, and an anode electrode and a cathode electrode formed over said one main surface,

• wherein said semiconductor substrate has a first conductive type epitaxial layer, and a first conductive type high-density region formed in said epitaxial layer and extending from said one main surface to said other main surface, and a second conductive type high-density region selectively formed in said epitaxial layer and separated from said first conductive type high-density region;
• said cathode electrode is connected to said first conductive type high-density region;
• said anode electrode is connected to said second conductive type high-density region;
• electrode bumps are each connected to said cathode electrode and said anode electrode;
• and
• said one main surface except for each top of said electrode bumps and at least the epitaxial layer exposed from the side face of said semiconductor substrate is covered with an insulating film.

A semiconductor device constituting a diode which has a semiconductor substrate having one main surface and the other main surface opposite to the one main surface, and an anode electrode and a cathode electrode formed over said one main surface,

• wherein said semiconductor substrate has an intrinsic epitaxial layer and an n-type semiconductor layer positioned under said epitaxial layer;
• said anode electrode is connected to a high-density p+-type region selectively formed in said epitaxial layer;
• said cathode electrode is connected to said n-type semiconductor layer exposed by selectively removing said epitaxial layer;
• said cathode electrode has a plane area larger than said anode electrode;
• electrode bumps are each connected to said anode electrode and said cathode electrode;
• and
• said one main surface except for each top of said electrode bumps and at least said n-type semiconductor layer exposed from the side face of said semiconductor substrate are covered with an insulating film.

A semiconductor device constituting a diode which has a semiconductor substrate having one main surface and the other main surface opposite to the one main surface, and an anode electrode and a cathode electrode formed over said one main surface,

• wherein said semiconductor substrate has a first conductive type epitaxial layer and a first conductive type semiconductor layer positioned under said epitaxial layer;
• said cathode electrode has one portion connected to said first conductive type semiconductor layer exposed by selectively removing said epitaxial layer;
• said cathode electrode has other portion extending onto said epitaxial layer;
• said anode electrode is selectively connected to a portion of said epitaxial layer onto which said cathode electrode does not extend to thereby construct a Schottky barrier;
• electrode bumps are each connected to said anode electrode and said cathode electrode;
• and
• said one main surface except for each top of said electrode bumps and at least said first conductive type semiconductor layer exposed from the side face of said semiconductor substrate are covered with an insulating film.

A semiconductor device constituting a diode which has a semiconductor substrate having one main surface and the other main surface opposite to the one main surface, and an anode electrode and a cathode electrode formed over said one main surface.

• wherein said semiconductor substrate has a first conductive type epitaxial layer, and a first conductive type high-density region selectively formed in said epitaxial layer and extending from said one main surface, and a second conductive type high-density region selectively formed in said first conductive type epitaxial layer and away from said first conductive type high-density region;
• said cathode electrode is connected to said first conductive type high-density region in said one main surface;
• said anode electrode is connected to said second conductive type high-density region in said one main surface;
• and
• further said cathode electrode has a plane area larger than said anode electrode.

A semiconductor device constituting a diode which has a semiconductor substrate having one main surface and the other main surface opposite to the one main surface, an anode electrode and a cathode electrode formed over said one main surface,

• wherein said semiconductor substrate has a first conductive type epitaxial layer and a first conductive type high-density region which is selectively formed in said epitaxial layer and which reaches to said one main surface, and a second conductive type high-density region selectively formed in said first conductive type epitaxial layer and away from said first conductive type high-density region;
• said cathode electrode is connected to said first conductive type high-density region in said one main surface;
• said anode electrode is connected to said second conductive type high-density region in said one main surface;
• and
• further an interval between said first conductive type high-density region and said second conductive type high-density region is larger than the thickness of said epitaxial layer.

A semiconductor device constituting a diode which has a semiconductor substrate having one main surface and the other main surface opposite to the one main surface, and an anode electrode and a cathode electrode formed over said one main surface.

• wherein said semiconductor substrate has a first conductive type epitaxial layer, and a first conductive type high-density region formed in said epitaxial layer and extending from said one main surface to said other main surface and a second conductive type high-density region selectively formed in said epitaxial layer and away from said first conductive type high-density region;
• said cathode electrode is connected to said first conductive type high-density region;
• said anode electrode is connected to said second conductive type high-density region;
• electrode bumps are each connected to said cathode electrode and said anode electrode;
• and
• said cathode electrode has a plane area larger than said anode electrode.