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US 6,605,848 B2Granted
Semiconductor device with metal gate electrode and silicon oxynitride spacer
AssigneeAdvanced Micro Devices, Inc.
InventorsMinh Van Ngo, Arvind Halliyal
Life of this patent
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Abstract
A semiconductor device including a semiconductor substrate; a metal gate electrode; and a silicon oxynitride spacer formed on a surface of the metal gate electrode, wherein an interface of the silicon oxynitride spacer and the metal gate electrode is substantially free of metal silicide. In one embodiment, the silicon oxynitride spacer includes a first portion and a second portion, in which the first portion is formed under starving silicon conditions.
Claims20
A semiconductor device, comprising:
- a semiconductor substrate;
- a metal gate electrode;
- and
- a silicon oxynitride spacer formed on a surface of the metal gate electrode, wherein an interface of the silicon oxynitride spacer and the metal gate electrode is substantially free of metal silicide.
1 more element
A semiconductor device, comprising:
- a semiconductor substrate;
- a metal gate electrode;
- and
- a silicon oxynitride spacer formed on a surface of the metal gate electrode, wherein an interface of the silicon oxynitride spacer and the metal gate electrode is substantially free of metal silicide,
- wherein the silicon oxynitride spacer comprises a first portion and a second portion, the first portion comprising silicon oxynitride having a formula:
- SiwOxNyH2
- wherein:
- w is in the range of about 20 to about 30 atomic percent silicon,
- x is in the range of about 25 to about 40 atomic percent oxygen,
- y is in the range of about 30 to about 40 atomic percent nitrogen,
- z is in the range of 0 to about 3 atomic percent hydrogen, and wherein w+x+y+z=100 atomic percent, and
- the second portion comprises silicon oxynitride having a formula:
- SiwOxNyHZ
- wherein:
- w is in the range of about 40 to about 56 atomic percent silicon,
- x is in the range of about 5 to about 25 atomic percent oxygen,
- y is in the range of about 10 to about 25 atomic percent nitrogen,
- z is in the range of 0 to about 10 atomic percent hydrogen, and wherein w+x+y+z=100 atomic percent.
15 more elements
A semiconductor device, comprising:
- a semiconductor substrate;
- a metal gate electrode, wherein the metal gate electrode comprises Mo, Ni, Ta, Al, Co, Cu, Re, Ti or W or a mixture or an alloy of two or more thereof, or a conductive metal nitride comprising one or more of TaN, TaSiN, WN, WSiN.;
- and
- a silicon oxynitride spacer formed on a surface of the metal gate electrode, wherein an interface of the silicon oxynitride spacer and the metal gate electrode is substantially free of metal silicide,
- wherein a first portion of the silicon oxynitride spacer has a refractive index in the range from about 1.6 to about 1.9, and a second portion of the silicon oxynitride spacer has a refractive index in the range from about 1.95 to about 2.3.
2 more elements
Dependencies are inferred from the claim text.