Memory cell configuration and production method
AssigneeInfineon Technologies AG
InventorSiegfried Schwarzl
Life of this patent
Estimating the term…
Abstract
A memory cell configuration includes a magnetoresistive element with an annular cross-section in a layer plane, a first line and a second line. The first and second lines crossing each other. The magnetoresistive element is disposed in the crossing region between the first line and the second line. The first line and/or the second line include at least one first portion, in which the predominant current component is oriented parallel to the layer plane, and one second portion, in which the predominant current component is oriented perpendicular to the layer plane.
Claims19
A memory cell configuration, comprising:
- a first line;
- a second line crossing said first line, said first line and said second line defining a crossing region;
- and
- a magnetoresistive element disposed in said crossing region and having an annular cross-section in a layer plane and layer elements stacked perpendicular to the layer plane;
- said first line and said second line being disposed in said crossing region on opposing sides of said magnetoresistive element relative to the layer plane;
- at least one of said first line and said second line including at least one first portion having a predominant current component oriented parallel to the layer plane and one second portion having a predominant current component oriented perpendicular to the layer plane, in said crossing region.
A method for producing a memory cell configuration, which comprises:
- creating a first line on a main surface of a substrate;
- forming a magnetoresistive element having an annular cross-section in a layer plane by depositing and structuring a first ferromagnetic layer, a non-magnetic layer, and a second ferromagnetic layer;
- disposing the magnetoresistive element in the crossing region by creating a second line crossing the first line;
- creating at least one of said first line and said second line in the overlap region;
- including a first portion of said at least one of said first line and said second line in the overlap region with a predominant current component oriented parallel to the layer plane, and a second portion with a predominant current component oriented perpendicular to the layer plane.
Dependencies are inferred from the claim text.