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US 6,605,827 B2Granted
Electrooptical substrate device and manufacturing method for same, electrooptical apparatus, electronic apparatus and manufacturing method for a substrate device
AssigneeSeiko Epson Corporation
InventorShigenori Katayama
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Abstract
An electrooptical substrate device has pixel electrodes and pixel-switching TFTs connected thereto, on a substrate. The TFT is a P-channel TFT of an SOI structure that does not have a body contact. Due to this, a transistor is architected in each pixel that is suited to broaden the opening area in each pixel, and having comparatively high performance, thereby enabling bright, high-quality image display.
Claims16
An electrooptical substrate device, comprising:
- a substrate;
- an insulator layer;
- an N-type single-crystal semiconductor layer formed above said insulator layer and including a P-type source region, a P-type drain region and a channel region;
- a gate electrode formed above said single-crystal semiconductor layer in said channel region through a gate insulating film;
- a scanning line connected to said gate electrode;
- a data line connected to one of said source region and said drain region;
- a pixel electrode connected to the other of said source region and said drain region,
- a P-channel transistor being architected by said single-crystal semiconductor layer, said gate insulating film and said gate electrode to switch-control said pixel electrode
- a peripheral circuit in a periphery of an image display region on which is formed said pixel electrode above said substrate,
- said peripheral circuit including an N-channel transistor, said N-channel transistor having a conductor layer to suck out carriers built up in the semiconductor layer thereof, and
- said P-channel transistor provided in said image display region not having a conductor layer to suck out carriers built up in the semiconductor layer thereof.
8 more elements
Dependencies are inferred from the claim text.