Manufacturing method of semiconductor devices by using dry etching technology

A manufacturing method of semiconductor devices by using dry etching technology, comprising:

• coating an overall upper surface of a first insulating film on a semiconductor substrate on which a first trench metallization has been formed with an organic silicon film;
• a first selective dry etching step of forming a contact hole which reaches said upper surface of the first trench metallization;
• changing said organic silicon film having said contact hole into a second insulating film constituted by any one of an organic silicon oxide film, an inorganic silicon oxide film, a silicon oxide film, a silicon nitride film and a silicon oxynitride film;
• coating an overall upper surface of said second insulating film with said organic silicon film;
• removing a portion of said organic silicon film for forming a trench of a second trench metallization including an opening portion of said contact hole and a portion of said organic silicon film in said contact hole by a second selective dry etching step of said organic silicon film;
• and
• changing said organic silicon film subjected to said removing step into a third insulating film constituted by any one of an organic silicon oxide film, an inorganic silicon oxide film, a silicon oxide film, a silicon nitride film and silicon oxynitride film.

A manufacturing method of semiconductor devices by using dry etching technology, comprising:

• forming any one of a first organic silicon oxide film, an inorganic silicon oxide film, a silicon oxide film on a first insulating film on a semiconductor substrate on which a first trench metallization has been formed;
• forming a stopper for dry etching constituted by an organic silicon film on any one of said first organic silicon oxide film, said inorganic silicon oxide film and said silicon oxide film,
• providing an opening portion to said stopper for forming a contact hole which reaches an upper surface of said first trench metallization;
• forming any one of a second organic silicon oxide film, an inorganic silicon oxide film and a silicon oxide film such that said stopper having said opening portion is buried;
• forming an etching mask for forming a second trench of said second trench metallization to correspond to said opening portion;
• and
• continuously and selectively dry etching any one of said first and second organic silicon oxide film, said inorganic silicon oxide film and said silicon oxide film by using said etching mask and said stopper having said opening portion.

A manufacturing method of semiconductor devices by using dry etching technology, comprising:

• forming a first insulating film on a semiconductor substrate;
• forming a trench by selectively dry etching said first insulating film;
• forming a trench metallization having a surface protection film and being embedded in said trench;
• smoothing a surface of said first insulating film by using said surface protection film as a stopper;
• coating on overall upper surface of said first insulating film subjected to forming said trench metallization with an organic silicon film;
• forming a contact hole which reaches said upper surface of said trench metallization by selectively dry etching said organic silicon film and an upper portion of said protection film;
• changing said organic silicon film into a second insulating film constituted by any one of an organic silicon oxide film, an inorganic silicon oxide film, a silicon oxide film, a silicon nitride film and a silicon oxynitride film.

A manufacturing method of semiconductor device by using dry etching technology, comprising:

• forming a gate insulating film on a semiconductor substrate;
• forming at least one metallic film on said gate insulating film and forming a pattern of a gate electrode constituted by a metallic film in a region of said semiconductor substrate which is covered with said metallic film and in which said gate electrode will be formed;
• covering said gate electrode with a silicon nitride film;
• covering a surface of said silicon nitride film with a first silicon oxide film;
• etching back said first silicon oxide film by using anisotropic dry etching to expose an upper surface of said silicon nitride film so that a gate sidewall is formed;
• coating an overall upper surface of said semiconductor substrate with an organic silicon film such that said gate electrode having said gate sidewall is buried;
• forming a contact hole which reaches said silicon nitride film by selectively removing said organic silicon film which covers a region adjacent to said gate electrode having said gate sidewall in which a source of a drain will be formed by performing dry etching using a resist film as a mask,
• removing said resist film by performing O2 ashing and simultaneously changing said organic silicon film into a second silicon oxide film;
• removing said silicon nitride film exposed to a bottom surface of said contact hole by performing dry etching such that said sidewall as a mask;
• and
• in a self-aligned manner, exposing said surface of a region which has been formed on said semiconductor substrate and in which said source or said drain will be formed and using said contact hole for connecting metallizations by further removing said gate insulating film exposed owing to removal of said silicon nitride film.