Back to results
US 6,605,541 B1Granted
Pitch reduction using a set of offset masks
AssigneeAdvanced Micro Devices, Inc.
InventorAllen S. Yu
Life of this patent
Estimating the term…
Abstract
A method of manufacturing a semiconductor device having features with a dimension of ½the minimum pitch wherein the minimum pitch is determined by the parameters of the manufacturing process being used to manufacture the semiconductor device. A target layer of material to be etched with dimensions of ½the minimum pitch is first etched with masks having a dimension of the minimum pitch and the target layer of material is then etched with the masks offset by ½the minimum pitch.
Claims3
A method of manufacturing a semiconductor device having features with a dimension of ½ the minimum pitch, wherein the method comprises:
- forming a target layer of material on a partially completed semiconductor device, wherein the target layer of material is to be etched to a dimension of ½ the minimum pitch;
- a first etch process of the target layer of material with masks having a dimension of the minimum pitch;
- and
- a second etch process of the target layer of material with the masks offset by a distance of ½ the minimum pitch.
1 more element
Dependencies are inferred from the claim text.