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US 6,605,529 B2Granted
Method of creating hydrogen isotope reservoirs in a semiconductor device
AssigneeAgere Systems Inc.
InventorsSundar Chetlur, Jennifer M. McKinley, Minesh A. Patel, Pradip K. Roy, Jonathan Zhong-Ning Zhou
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Abstract
The present invention provides a method of manufacturing a semiconductor device that includes incorporation of a hydrogen isotope at a relatively high processing temperature during gate oxidation or polysilicon gate electrode deposition to maximize incorporation of hydrogen isotope at interfaces deliberately created during oxidation (such as graded oxidation) as multilayered poly/alpha-silicon deposition process.
Claims22
A method of manufacturing a semiconductor device, comprising:
- creating a hydrogen isotope sink within a semiconductor gate located over a semiconductor substrate by oscillating a deposition parameter during a formation of the semiconductor gate;
- and
- incorporating a hydrogen isotope into the semiconductor gate at the sink.
A method of manufacturing an integrated circuit, comprising:
- creating hydrogen isotope sinks within gate transistor structures located on a semiconductor substrate by oscillating a deposition parameter during a formation of the gate transistor structures;
- and
- incorporating a hydrogen isotope into the transistor structures.
Dependencies are inferred from the claim text.