Method of manufacturing a semiconductor device having a protruding bump electrode
AssigneeKabushiki Kaisha Toshiba
InventorsHirokazu Ezawa, Masahiro Miyata
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Abstract
A present semiconductor device includes a plurality of bump electrodes formed over a semiconductor substrate to allow signals to be input and output to and from a semiconductor element. After the formation of the bump electrodes an organic insulting film is coated on the whole surface of a resultant wafer structure, followed by a drying, a solidifying and an etch-back step. By so doing, a top area of the bump electrode is more projected than a top area of the organic insulating film. A lead is connected by a pressure and heat to the top area of the bump electrode.
Claims9
A method of manufacturing a semiconductor device comprising:
- forming at least one electrode pad over a semiconductor substrate;
- providing an opening to a surface portion of the electrode pad after forming a passivation film over a surface of the semiconductor substrate and that of the electrode pad;
- forming a metal film over the surface of the electrode pad at an area of the opening and over the passivation film near the opening;
- providing a bump electrode over the metal layer;
- forming an organic insulating film over the bump electrode and passivation film;
- etching back the organic insulating film to allow a top area of the bump electrode to be more projected than a top area of the organic insulating film;
- and
- joining a lead by heat and pressure to the top area of the bump electrode which is more projected than the top area of the organic insulating film.
Dependencies are inferred from the claim text.