Method of forming silicon-germanium film
AssigneeHynix Semiconductor Inc.
InventorWoo Seock Cheong
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Abstract
A method of forming a silicon-germanium (SiGe) film for a gate electrode. In a metal gate manufacture process, as the content of germanium (Ge) is increased, the surface roughness of the silicon-germanium (SiGe) film is increased, which makes difficult to secure an acceptable electrical characteristic as well as a set-up. In order to solve these problems, a method includes the spraying with a high density silicon micro-crystallite capable of increasing the nucleus creation efficiency on a gate oxide using a plasma or a tungsten (W) filament before depositing a silicon-germanium (SiGe) film. Thus, as micro-crystalline grains are formed during a preliminary stage of the silicon-germanium (SiGe) film deposition, a silicon-germanium (SiGe) film can be deposited with a reduced surface roughness.
Claims34
A method of forming a silicon-germanium film, comprising:
- fixing a semiconductor substrate on which a gate oxide is formed, within a deposition chamber;
- flowing SiH4 and H2 into said deposition chamber and forming a plurality of silicon micro-crystallites on a surface of said gate oxide using a plasma system;
- and
- flowing SiH4, GeH4 and H2 into said deposition chamber to deposit silicon-germanium around the silicon micro-crystallites.
A method of forming a silicon-germanium film comprising:
- fixing a semiconductor substrate on which a gate oxide is formed, within a deposition chamber;
- flowing SiH4 and H2 into said deposition chamber and forming silicon micro-crystallites on a surface of said gate oxide using thermal electrons emitted from a filament;
- and
- flowing SiH4, GeH4 and H2 into said deposition chamber to deposit silicon-germanium around the silicon micro-crystallites.
Dependencies are inferred from the claim text.