Planar finFET patterning using amorphous carbon
AssigneeAdvanced Micro Devices, Inc.
InventorsCyrus E. Tabery, Scott A. Bell, Srikanteswara Dakshina-Murthy
Life of this patent
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Abstract
An exemplary embodiment relates to a method of finFET patterning. The method can include patterning a fin structure above a substrate, forming amorphous carbon spacers along lateral sidewalls of the fin structure, depositing an oxide layer and polishing the oxide layer to expose top portions of the fin structure and the amorphous carbon spacers, removing amorphous carbon spacers, and depositing polysilicon where the amorphous carbon spacers were located.
Claims20
A method of finFET patterning, the method comprising:
- patterning a fin structure above a substrate;
- forming amorphous carbon spacers along lateral sidewalls of the fin structure;
- depositing an oxide layer and polishing the oxide layer to expose top portions of the fin structure and the amorphous carbon spacers;
- removing the amorphous carbon spacers;
- and
- depositing polysilicon where the amorphous carbon spacers were located.
A method of FinFET gate patterning, the method comprising:
- providing amorphous carbon spacers adjacent a fin structure;
- providing a layer of oxide adjacent the amorphous carbon spacers;
- removing the amorphous carbon spacers;
- and
- forming a gate structure above the fin structure and where the amorphous carbon spacers were located.
A patterning method comprising:
- forming a fin structure having a silicon portion and silicon dioxide portion, the fin structure having a dimension of 10-50 nm;
- forming amorphous carbon spacers adjacent lateral sidewalls of the fin structure,
- forming a layer adjacent to and co-planar with the spacers;
- removing the spacers;
- and
- depositing polysilicon where the spacers were located.
Dependencies are inferred from the claim text.