Method of manufacturing semiconductor device over glass substrate having heat resistance
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Hisashi Ohtani
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Abstract
When a crystalline semiconductor thin film formed by using a catalytic element for facilitating crystallization is subjected to a heat treatment in an atmosphere containing a halogen element at a temperature exceeding 700° C., a crystal structure in which crystal grain boundaries do not substantially exist can be obtained. In the present invention, the foregoing crystalline semiconductor thin film is formed on a crystallized glass substrate which is inexpensive and has high heat resistance, so that an inexpensive semiconductor device can be provided.
Claims50
A method of manufacturing a semiconductor device, said method comprising the steps of:
- forming a first amorphous semiconductor film comprising silicon over a front surface and a back surface of a glass substrate having a distortion point of not lower than 750° C.;
- carrying out a first heat treatment to oxidize the first amorphous semiconductor film to form a first thermal oxidation film;
- forming a second amorphous semiconductor film comprising silicon over the first thermal oxidation film formed over the front surface of the glass substrate;
- providing the second amorphous semiconductor film with a catalytic element for facilitating crystallization of the second amorphous semiconductor film;
- carrying out a second heat treatment to crystallize the second amorphous semiconductor film to form a crystalline semiconductor film;
- gettering the catalytic element from the crystalline semiconductor film;
- and
- patterning the crystalline semiconductor film after the gettering step to form an active layer and to form a second thermal oxidation film on a surface of the active layer.
A method of manufacturing a semiconductor device, said method comprising the steps of:
- forming a first amorphous semiconductor film comprising silicon over a front surface and a back surface of a glass substrate having a distortion point of not lower than 750° C.;
- carrying out a first heat treatment to oxidize the first amorphous semiconductor film to form a thermal oxidation film;
- forming a second amorphous semiconductor film comprising silicon over the thermal oxidation film formed over the front surface of the glass substrate;
- carrying out a second heat treatment to crystallize the second amorphous semiconductor film to form a crystalline semiconductor film;
- and
- patterning the crystalline semiconductor film to form an active layer.
A method of manufacturing an electroluminescent display device, said method comprising the steps of:
- forming a first amorphous semiconductor film comprising silicon over a front surface and a back surface of a glass substrate having a distortion point of not lower than 7500° C.;
- carrying out a first heat treatment to oxidize the first amorphous semiconductor film to form a first thermal oxidation film;
- forming a second amorphous semiconductor film comprising silicon over the first thermal oxidation film formed over the front surface of the glass substrate;
- providing the second amorphous semiconductor film with a catalytic element for facilitating crystallization of the second amorphous semiconductor film;
- carrying out a second heat treatment to crystallize the second amorphous semiconductor film to form a crystalline semiconductor film;
- gettering the catalytic element from the crystalline semiconductor film:
- and
- patterning the crystalline semiconductor film after the geftering step to form an active layer and to form a second thermal oxidation film on a surface of the active layer.
A method of manufacturing an electroluminescent display device, said method comprising the steps of;
- forming a first amorphous semiconductor film comprising silicon over a front surface and a back surface of a glass substrate having a distortion point of not lower than 750° C.:
- carrying out a first heat treatment to oxidize the first amorphous semiconductor film to form a thermal oxidation film:
- forming a second amorphous semiconductor film comprising silicon over the thermal oxidation film formed over the front surface of the glass substrate;
- carrying out a second heat treatment to crystallize the second amorphous semiconductor film to form a crystalline semiconductor film;
- and
- patterning the crystalline semiconductor film to form an active layer.
Dependencies are inferred from the claim text.