Method of forming a thin film transistor liquid crystal display
AssigneeAu Optronics Corporation
InventorTai-Yu Kuo
Life of this patent
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Abstract
A method of forming a thin film transistor liquid crystal display includes forming a gate, a scan line and two first repair pads on a substrate first. A dielectric layer, a semiconductor layer, an etching stop layer and a metal layer are thereafter formed. After that, the metal layer and the semiconductor layer are etched to form a signal line and a source/drain. A passivation layer is formed and portions of the drain are exposed. Finally, a pixel electrode is formed and a second repair pad on top of each of the first repair pads is formed to form a repair circuit.
Claims19
A method of fabricating a thin film transistor liquid crystal display (TFT-LCD) with a repair circuit, the method comprising the step of:
- providing a substrate, at least one transistor region for forming a thin film transistor (TFT) and at least one crossover region being on the substrate;
- forming a first metal layer on the substrate;
- patterning the first metal layer by removing a part of the first metal layer to form a gate electrode in the transistor area, a scan line passing through the crossover region and a first repair pad at either side of the crossover region simultaneously on the substrate;
- depositing a dielectric layer and a semiconductor layer sequentially on the substrate to cover the gate electrode, the scan line, and each first repair pad;
- forming an etching stop on the semiconductor layer, the etching stop being positioned above the gate electrode;
- depositing a doped semiconductor layer on the semiconductor layer and the etching stop;
- forming a second metal layer on the doped semiconductor layer;
- patterning the second metal layer, the doped semiconductor layer and the semiconductor layer by removing a part of the second metal layer, the doped semiconductor layer and the semiconductor layer to form a source electrode and a drain electrode and to define an active area of the thin film transistor in the transistor region and to form a signal line passing through the crossover region simultaneously;
- forming a passivation layer on the substrate;
- patterning the passivation layer by removing a part of the passivation layer positioned above the drain electrode to form a first via hole extending to the top surface of the drain electrode and a second via hole extending to the top surface of a first metal electrode in a peripheral area of the panel;
- forming a transparent conductive layer on the substrate to fill up the first via hole on the drain electrode;
- and
- patterning the transparent conductive layer by removing a part of the transparent conductive layer to form a pixel electrode electrically connected to the drain electrode via the first via hole and simultaneously form a second repair pad above each first repair pad, each first repair pad and the second repair pad form a repair circuit region.
Dependencies are inferred from the claim text.