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US 6,605,486 B2Granted
Bipolar transistor, semiconductor light emitting device and semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorHidetoshi Fujimoto
Life of this patent
Estimating the term…
Abstract
In a GaAs type semiconductor device, InpGa1−pN (0<p≦1) is used to thereby form heterojunction having a large difference in energy gap, thereby providing a high performance semiconductor device.
Claims18
A semiconductor device comprising:
- a first semiconductor layer made of IntGa1−tN (0<t≦1);
- and
- a second semiconductor layer which forms heterojunction with said first semiconductor layer, has higher electron affinity than said first semiconductor and contains a material selected from the group consisting of GaAs, InGaAs, AlGaAs, InAlGaP, InGaAsP, GaSb, GaAsSb, GaNAs, InGaNAs, SiGe and HgCdTe.
Dependencies are inferred from the claim text.