Method of preparing pattern data to be used for different exposure methods
AssigneeNEC Corporation
InventorMitsuru Narihiro
Life of this patent
Estimating the term…
Abstract
Pattern data are divided into light beam exposure pattern data and electron beam exposure pattern data free of any overlap margin. Overlap margins are given without size-reduction to the electron beam exposure pattern in order to avoid any disappearance of any parts of the fine pattern.
Claims18
A method of preparing a pattern data for a first type exposure process with a first resolving power and a second type exposure process with a second resolving power, which is higher than said first resolving power, said method comprising the steps of:
- dividing said pattern data into a first type pattern data for said first type exposure process and a second type pattern data for said second type exposure process, wherein said second type pattern data is free of overlap margin;
- carrying out at least a relative displacement of said second type pattern data to said first type pattern data and carrying out an AND-operation between said first and second type pattern data for forming an overlap margin between said first and second type pattern data;
- and
- combining said at least overlap margin with said second type pattern data.
A method of preparing a pattern data for a first type exposure process with a first resolving power and a second type exposure process with a second resolving power, which is higher than said first resolving power, said method comprising the steps of:
- dividing said pattern data into a first type pattern data for said first type exposure process and a second type pattern data for said second type exposure process, wherein said second type pattern data is free of overlap margin;
- broadening an outline of said second type pattern data and carrying out an AND-operation between said first and second type pattern data for forming at least an overlap margin between said first and second type pattern data;
- and
- combining said at least overlap margin with said second type pattern data.
A method of preparing a pattern data for a first type exposure process with a first resolving power and a second type exposure process with a second resolving power, which is higher than said first resolving power, said method comprising the steps of:
- dividing said pattern data into a first type pattern data for said first type exposure process and a second type pattern data for said second type exposure process, wherein said second type pattern data is free of overlap margin;
- forming a first type overlap margin which extends from said boundary line in a perpendicular direction to said boundary line;
- and
- forming a second type overlap margin which extends in a direction parallel to said boundary line;
- performing an AND-operation between said first and second type pattern data to extract said overlap margin;
- and
- combining said at least overlap margin with said second type pattern data.
Dependencies are inferred from the claim text.