X-ray mask structure, and X-ray exposure method and apparatus using the same
AssigneeCanon Kabushiki Kaisha
InventorsTakahiro Matsumoto, Keiko Chiba
Life of this patent
Estimating the term…
Abstract
An X-ray mask structure for use in X-ray lithography includes an X-ray transmission film to be disposed opposed to a workpiece in X-ray exposure, the X-ray transmission film having an X-ray absorptive material corresponding to a pattern to be printed on the workpiece, and a thin film covering at least a portion of the X-ray transmission film, the thin film having an anti-reflection function with respect to alignment light to be projected to the thin film for direct or indirect detection of relative positional deviation between the mask structure and the workpiece.
Claims20
A mask structure for X-ray lithography, comprising:
- an X-ray transmission film to be disposed opposed to a workpiece in X-ray exposure, the X-ray transmission film having an X-ray absorptive material corresponding to a pattern to be printed on the workpiece;
- and
- a thin film covering at least a portion of the X-ray transmission film, at a position spaced apart from the X-ray transmission film to define a space between the X-ray transmission film and the thin film, the thin film having (i) a first anti-reflection property with respect to first alignment light of a first wavelength different from that of X-rays used for the X-ray exposure, and (ii) a second anti-reflection property with respect to second alignment light of a second wavelength different from the first wavelength and from that of the X-rays used for the X-ray exposure.
Dependencies are inferred from the claim text.