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US 6,605,205 B2Granted
Method for continuous processing of semiconductor wafers
AssigneeMicron Technology, Inc.
InventorsSalman Akram, David R. Hembree
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Abstract
An electrochemical reaction assembly and methods of inducing electrochemical reactions, such as for deposition of materials on semiconductor substrates. The assembly and method achieve a highly uniform thickness and composition of deposition material or uniform etching or polishing on the semiconductor substrates by retaining the semiconductor substrates on a moving cathode immersed in an appropriate reaction solution wherein a wire mesh anode rotates about the moving cathode during electrochemical reaction.
Claims25
A method of processing semiconductor substrates, comprising:
- disposing a hollow first electrode within a chamber;
- providing a second electrode configured to removably retain and electrically communicate with at least one semiconductor substrate, the second electrode configured to be moved through the hollow first electrode;
- disposing a reaction solution within the chamber;
- providing an electrical power source to be communicated with the hollow first electrode and the second electrode;
- engaging at least one semiconductor substrate with the second electrode;
- and
- immersing the at least one semiconductor substrate in the reaction solution within the chamber and moving at least a portion of the second electrode through the hollow first electrode while communicating the electrical power source with the hollow first electrode and the second electrode.
4 more elements
Dependencies are inferred from the claim text.