Apparatus for, and method of, depositing a film on a substrate

An apparatus for providing a deposition on a planar substrate, including,

• a planar anode disposed in displaced and substantially parallel relationship to the substrate,
• a target spaced from the anode to serve as a cathode, the target having properties of emitting sputtered atoms when bombarded by gaseous ions and of directing the sputtered atoms to the substrate, the target having a hollow substantially frusto-conical configuration with an axis substantially perpendicular to the anode and the substrate,
• first means for defining a cavity between the anode and the target for receiving atoms of an inert gas,
• means for introducing the inert gas into the cavity,
• second means for applying a positive voltage to the anode and a negative voltage to the target relative to the positive voltage on the anode to establish a flow of electrons from the target toward the anode and a glow discharge between the target and the anode to ionize atoms of the inert gas in the cavity, and
• third means disposed relative to the anode and the target for providing a movement of the electrons between the target and the anode through other than a straight line path to enhance the ionization of the atoms of the inert gas and the emission of the sputtered atoms from the target for movement toward the substrate,
• the third means being at a potential lower than the positive voltage on the anode,
• the voltage between the anode and the target having a magnitude, and the positive voltage on the anode having a magnitude, to obtain depositions of the sputtered atoms from the target on the substrate with particular characteristics dependent upon the magnitude of the anode voltage and the difference between the anode voltage and the target voltage,
• the anode, the gas-introducing means, the first means, the second means and the third means being disposed relative to the target and the substrate to provide for the flow of the sputtered atoms from the target to the substrate without any obstruction, and
• there being in the substrate a groove defined by walls,
• the third means including magnetic means for providing a substantially constant magnetic field for increasing the distance of movement of the electrons toward the target to enhance the ionization of the atoms of the inert gas in the cavity, the third means including the magnetic means being operative to enhance the ionization of the atoms of the inert gas in the cavity without obstructing the flow of the sputtered atoms from the target to the substrate,
• the substrate being at a voltage lower than the positive voltage on the anode,
• the anode having a magnitude, and the difference between the voltages on the anode and the target having a magnitude, to obtain a deposition of a substantially uniform thickness of the sputtered atoms from the target on the surface of the substrate and on the walls of the groove in the substrate.

An apparatus as set forth in 5, including:

• the groove having walls,
• a shield disposed between the anode and the substrate without obstructing the flow of sputtered atoms from the target to the substrate,
• there being a positive voltage on the anode with a magnitude, and there being a voltage difference between the anode and the target with a magnitude, to obtain a deposition on the substrate of the material of the target to fill the groove and to provide a deposition with a substantially smooth surface of the deposition on the substrate at the positions of the groove and at the positions removed from the groove,
• there being substantially ground potentials on the third means, the shield and the substrate.

In combination,

• a planar anode,
• a hollow target spaced from the anode to serve as a cathode, the hollow target having a hollow substantially frusto-conical shape with an axis substantially perpendicular to the anode,
• there being a cavity between the anode and the hollow target to receive molecules of a neutral gas,
• a planar substrate disposed in the cavity in substantially parallel relationship to the planar anode to receive atoms of the material emitted from the target and to provide a deposition of such atoms on the substrate,
• there being in the substrate a groove having walls,
• first means for introducing the neutral gas into the cavity,
• second means for applying a positive voltage to the anode and for applying to the target a voltage negative relative to the positive voltage on the anode to produce a flow of electrons from the target toward the anode and to establish a glow discharge between the target and the anode to ionize atoms of the neutral gas in the cavity, and
• third means for producing a substantially constant magnetic field between the anode and the target to provide for the movement of the electrons between the anode and the target in a convoluted path for ionizing molecules of the neutral gas in the cavity and to provide for an emission of sputtered atoms from the target for movement toward the substrate, the magnetic field means being at a voltage lower than the positive voltage on the anode,
• the voltages on the anode and the cathode having a difference, and the anode having a positive voltage, to produce an electrical field between the anode and the cathode to provide a deposition of the sputtered atoms on the substrate and on the walls of the groove in the substrate with particular characteristics of the deposition on the surface of the substrate relative to the characteristics of the deposition on the walls of the groove in the substrate, and
• the positive voltage on the anode having a magnitude dependent upon the characteristics of the deposition of the sputtered atoms on the substrate,
• the anode, the first means, the second means and the third means being disposed relative to the target and the substrate to provide for a flow of the sputtered atoms from the target to the substrate without obstruction,
• a shield disposed in the cavity between the target and the substrate and shaped to receive charged particles and prevent the charged particles from travelling to the substrate, the shield being disposed to prevent the charged particles from travelling to the substrate without obstructing the flow of the sputtered atoms from the target to the substrate,
• the shield being at a voltage less than the positive voltage on the anode,
• the characteristics of the deposition on the substrate and on the walls of the groove in the substrate being dependent upon the magnitude of the positive voltage on the anode and upon the difference between the voltages on the anode and the cathode,
• the third means being constructed and disposed to produce the substantially constant magnetic field in a direction substantially perpendicular to the electrical field between the anode and the cathode, and
• the substrate being at a voltage lower than the positive voltage on the anode,
• the magnitude of the positive voltage on the anode having a first value to provide a deposition with a substantially uniform thickness on the surface of the substrate and on the walls of the groove in the substrate and having a second value different from the first value to substantially fill the groove with the deposition and to provide the surface of the substrate and the filled groove with a deposition having a substantially smooth surface.

In combination,

• a planar anode,
• a hollow target spaced from the anode to serve as a cathode, the hollow target having a hollow substantially frusto-conical shape with an axis substantially perpendicular to the anode,
• there being a cavity between the anode and the hollow target to receive molecules of a neutral gas,
• a planar substrate disposed in the cavity in substantially parallel relationship to the planar anode to receive atoms of the material emitted from the target and to provide a deposition of such atoms on the substrate,
• there being in the substrate a groove having walls,
• first means for introducing the neutral gas into the cavity,
• second means for applying a positive voltage to the anode and for applying to the target a voltage negative relative to the positive voltage on the anode to produce a flow of electrons from the target toward the anode and to establish a glow discharge between the target and the anode to ionize atoms of the neutral gas in the cavity, and
• third means for producing a substantially constant magnetic field between the anode and the target to provide for the movement of the electrons between the anode and the target in a convoluted path for ionizing molecules of the neutral gas in the cavity and to provide for an emission of sputtered atoms from the target for movement toward the substrate, the magnetic field means being at a voltage lower than the positive voltage on the anode,
• the voltages on the anode and the cathode having a difference, and the anode having a positive voltage, to produce an electrical field between the anode and the cathode to provide a deposition of the sputtered atoms on the substrate and on the walls of the groove in the substrate with particular characteristics of the deposition on the surface of the substrate relative to the characteristics of the deposition on the walls of the groove in the substrate, and
• the positive voltage on the anode having a magnitude dependent upon the characteristics of the deposition of the sputtered atoms on the substrate,
• the anode, the first means, the second means and the third means being disposed relative to the target and the substrate to provide for a flow of the sputtered atoms from the target to the substrate without obstruction, and
• the glow discharge being at substantially the positive voltage of the anode and providing a deposition of the sputtered atoms from the target on the substrate with a substantially uniform thickness on the substrate and on the walls of the groove for a first voltage on the anode and a first voltage difference between the anode and the cathode and, for a second voltage on the anode and a second voltage difference between the anode and the cathode, providing a deposition substantially filling the groove and providing the surface of the substrate and the filled groove with a deposition having a substantially smooth surface.

An apparatus for providing a deposition of sputtered atoms on a planar substrate, including,

• a planar anode disposed in spaced and substantially parallel relationship to the substrate,
• a target displaced from the anode to define with the anode a cavity for receiving atoms of a neutral gas in the cavity,
• means for introducing the neutral gas into the cavity,
• means for providing a positive voltage on the anode to produce a flow of electrons from the target toward the anode and to establish a glow discharge between the target and the anode and to provide for an ionization by such electrons of atoms of the neutral gas in the cavity and an emission of sputtered atoms from the target to the substrate for a deposition of the sputtered atoms on the substrate,
• means for providing a negative voltage on the target relative to the positive voltage on the anode to attract the ions and obtain the emission from the target of sputtered atoms for movement toward the substrate, the voltages on the anode and the cathode creating an electrical field,
• means for creating a substantially constant magnetic field in the cavity in a direction substantially perpendicular to the electrical field between the anode and the target to create a force on the electrons for a movement of the electrons between the anode and the target through other than a straight line path and to enhance the ionization of the atoms of the neutral gas in the cavity, the magnetic field means being at a voltage less than the positive voltage on the anode,
• there being a voltage difference between the anode and the cathode of a magnitude, and the voltage on the anode having a magnitude, controlling the characteristics of the deposition of the sputtered atoms on the substrate,
• the target having a hollow substantially frusto-conical configuration with an axis substantially perpendicular to the anode and the anode being disposed relative to the hollow frusto-conical configuration of the target to provide for a flow of the sputtered atoms from the target to the substrate without obstruction, and
• a shield disposed in the cavity between the substrate and the target and having a voltage lower than the positive voltage on the anode and shaped and disposed to receive charged particles traveling toward the substrate,
• there being in the substrate a groove defined by walls,
• the voltage on the anode having a magnitude, and the voltage difference between the anode and the target having a magnitude, to provide the deposition of the sputtered atoms on the substrate with a substantially uniform thickness on the substrate and on the walls of the groove in the substrate.

An apparatus for providing a deposition of sputtered atoms on a planar substrate, including,

• a planar anode disposed in spaced and substantially parallel relationship to the substrate,
• a target displaced from the anode to define with the anode a cavity for receiving atoms of a neutral gas in the cavity,
• means for introducing the neutral gas into the cavity,
• means for providing a positive voltage on the anode to produce a flow of electrons from the target toward the anode and to establish a glow discharge between the target and the anode and to provide for an ionization by such electrons of atoms of the neutral gas in the cavity and an emission of sputtered atoms from the target to the substrate for a deposition of the sputtered atoms on the substrate,
• means for providing a negative voltage on the target relative to the positive voltage on the anode to attract the ions and obtain the emission from the target of sputtered atoms for movement toward the substrate, the voltages on the anode and the cathode creating an electrical field,
• means for creating a substantially constant magnetic field in the cavity in a direction substantially perpendicular to the electrical field between the anode and the target to create a force on the electrons for a movement of the electrons between the anode and the target through other than a straight line path and to enhance the ionization of the atoms of the neutral gas in the cavity, the magnetic field means being at a voltage less than the positive voltage on the anode,
• there being a voltage difference between the anode and the cathode of a magnitude, and the voltage on the anode having a magnitude, controlling the characteristics of the deposition of the sputtered atoms on the substrate,
• the target having a hollow substantially frusto-conical configuration with an axis substantially perpendicular to the anode and the anode being disposed relative to the hollow frusto-conical configuration of the target to provide for a flow of the sputtered atoms from the target to the substrate without obstruction, and
• means for introducing the neutral gas into the cavity,
• the substrate being at a voltage lower than the voltage on the anode,
• the target being made from aluminum, and
• means for introducing oxygen into the cavity to convert the sputtered atoms of aluminum from the target to aluminum oxide and to obtain the deposition of the aluminum oxide on the substrate with an index of refraction of least approximately 1.63,
• the anode being at a positive voltage having a magnitude to obtain a deposition of the sputtered atoms of aluminum oxide with the index of refraction of at least approximately 1.63 at oxygen flow rates preventing any reduction in the voltage on the target with changes in the oxygen flow rates.

An apparatus for providing a deposition of sputtered atoms,

• a substrate having a planar configuration and having in the substrate at least one groove defined by walls,
• a planar anode disposed in a spaced and substantially parallel relationship to the planar substrate,
• a target displaced from the anode to define with the anode a cavity for receiving atoms of a neutral gas in the cavity, the target having a hollow substantially frusto-conical configuration with an axis substantially perpendicular to the anode and the substrate,
• first means for introducing the atoms of the neutral gas into the cavity,
• second means for providing a positive voltage on the anode to produce a movement of electrons from the target toward the anode and to cause the ionization by such electrons of atoms of the neutral gas in the cavity,
• third means for providing a negative voltage on the target relative to the positive voltage on the anode to attract the ions and obtain the emission from the target of sputtered atoms for movement toward the substrate, the voltages on the anode and the target creating an electrical field for attracting the electrons toward the anode,
• fourth means for providing a substantially constant magnetic field in a direction substantially perpendicular to the electric field for co-operating with the electrical field to increase the distance of travel of the electrons between the anode and the target and enhance the ionization of the atoms of the neutral gas in the cavity,
• the positive voltage on the anode and the negative voltage on the target having values to control the thickness of the deposition and the characteristics of the deposition of the sputtered atoms on the substrate and on the walls in the groove in the substrate,
• the anode and the first means, the second means, the third means and the fourth means being disposed relative to the target and the substrate to provide for the flow of the sputtered atoms from the target to the substrate without obstruction, and
• the positive voltage on the anode and the negative voltage on the target relative to the positive voltage on the anode having values to produce a sputtered atom deposition of substantially uniform thickness on the walls of the groove in the substrate and on the substrate.

An apparatus for providing a deposition of sputtered atoms,

• a substrate having a planar configuration and having in the substrate at least one groove defined by walls,
• a planar anode disposed in a spaced and substantially parallel relationship to the planar substrate,
• a target displaced from the anode to define with the anode a cavity for receiving atoms of a neutral gas in the cavity, the target having a hollow substantially frusto-conical configuration with an axis substantially perpendicular to the anode and the substrate,
• first means for introducing the atoms of the neutral gas into the cavity,
• second means for providing a positive voltage on the anode to produce a movement of electrons from the target toward the anode and to cause the ionization by such electrons of atoms of the neutral gas in the cavity,
• third means for providing a negative voltage on the target relative to the positive voltage on the anode to attract the ions and obtain the emission from the target of sputtered atoms for movement toward the substrate, the voltages on the anode and the target creating an electrical field for attracting the electrons toward the anode,
• fourth means for providing a substantially constant magnetic field in a direction substantially perpendicular to the electric field for co-operating with the electrical field to increase the distance of travel of the electrons between the anode and the target and enhance the ionization of the atoms of the neutral gas in the cavity,
• the positive voltage on the anode and the negative voltage on the target having values to control the thickness of the deposition and the characteristics of the deposition of the sputtered atoms on the substrate and on the walls in the groove in the substrate,
• the anode and the first means, the second means, the third means and the fourth means being disposed relative to the target and the substrate to provide for the flow of the sputtered atoms from the target to the substrate without obstruction, and
• the positive voltage on the anode and the negative voltage on the target relative to the positive voltage on the anode having values to produce a sputtered atom deposition filling the groove and providing a substantially uniform thickness on the surface of the substrate and on the surface of the deposition in the filled groove.

An apparatus for providing a deposition of sputtered atoms on a planar substrate having at least one groove defined by walls, including,

• a planar anode disposed in a spaced and substantially parallel relationship to the substrate,
• a target spaced from the anode to serve as a cathode, the target having properties of emitting sputtered atoms when bombarded by gaseous ions and of directing the sputtered atoms to the substrate, the target having a hollow substantially frusto-conical shape with an axis substantially perpendicular to the anode and the substrate,
• first means for defining a cavity between the anode and the target for receiving atoms of an inert gas,
• second means for introducing the inert gas into the cavity,
• third means for applying a positive voltage of a first magnitude on the anode to establish a glow discharge between the target and the anode and to provide for the ionization by such glow discharge of atoms of the inert gas in the cavity,
• fourth means for providing a negative voltage of a second magnitude on the target relative to the positive voltage on the anode, the relative voltages between the anode and the cathode creating an electrical field between the anode and the cathode,
• fifth means disposed relative to the anode and the target for creating a substantially constant magnetic field between the anode and the cathode in a direction substantially perpendicular to the electrical field for obtaining a movement of the ions toward the target in a path to obtain the emission of the sputtered atoms from the target for movement toward the substrate,
• the first magnitude of the positive voltage on the anode, and the difference between the positive voltage of the first magnitude and the negative voltage of the second magnitude, producing a deposition of the sputtered atoms in the groove of the substrate with characteristics dependent upon the first magnitude of the positive voltage on the anode and the difference between the positive voltage of the first magnitude and the negative voltage of the second magnitude respectively on the anode and the target,
• the anode and the first through fifth means being disposed relative to the target and the substrate to provide for a flow of the sputtered atoms from the target to the substrate without obstruction, and
• the first magnitude of the positive voltage on the anode and the difference between the positive voltage of the first magnitude and the negative voltage of the second magnitude respectively on the anode and the target providing for a deposition of the sputtered atoms with a substantially uniform thickness on the substrate and on the walls of the groove.

An apparatus for providing a deposition of sputtered atoms on a planar substrate having at least one groove defined by walls, including,

• a planar anode disposed in a spaced and substantially parallel relationship to the substrate,
• a target spaced from the anode to serve as a cathode, the target having properties of emitting sputtered atoms when bombarded by gaseous ions and of directing the sputtered atoms to the substrate, the target having a hollow substantially frusto-conical shape with an axis substantially perpendicular to the anode and the substrate,
• first means for defining a cavity between the anode and the target for receiving atoms of an inert gas,
• second means for introducing the inert gas into the cavity,
• third means for applying a positive voltage of a first magnitude on the anode to establish a glow discharge between the target and the anode and to provide for the ionization by such glow discharge of atoms of the inert gas in the cavity,
• fourth means for providing a negative voltage of a second magnitude on the target relative to the positive voltage on the anode, the relative voltages between the anode and the cathode creating an electrical field between the anode and the cathode,
• fifth means disposed relative to the anode and the target for creating a substantially constant magnetic field between the anode and the cathode in a direction substantially perpendicular to the electrical field for obtaining a movement of the ions toward the target in a path to obtain the emission of the sputtered atoms from the target for movement toward the substrate,
• the first magnitude of the positive voltage on the anode, and the difference between the positive voltage of the first magnitude and the negative voltage of the second magnitude, producing a deposition of the sputtered atoms in the groove of the substrate with characteristics dependent upon the first magnitude of the positive voltage on the anode and the difference between the positive voltage of the first magnitude and the negative voltage of the second magnitude respectively on the anode and the target,
• the anode and the first through fifth means being disposed relative to the target and the substrate to provide for a flow of the sputtered atoms from the target to the substrate without obstruction,
• the first magnitude of the positive voltage on the anode and the difference between the positive voltage of the first magnitude and the negative voltage of the second magnitude respectively on the anode and the target providing on the substrate a sputtered atom deposition substantially filling the groove in the substrate and providing a substantially smooth surface on the substrate and on the filled groove.

In a method of providing a deposition of sputtered atoms, the steps of:

• providing a planar substrate with a groove in the substrate, the groove being defined by walls, the steps of:
• providing a planar anode in a spaced and substantially parallel relationship to the substrate,
• providing a target in spaced relationship to the anode to define a cavity, the target having a hollow frusto-conical configuration with an axis substantially perpendicular to the planar anode and the planar substrate,
• providing a positive voltage on the anode and, on the target, a voltage negative relative to the positive voltage to establish an electrical field between the anode and the target and to establish a glow discharge between the anode and the target for the emission of electrons from the target and the movement of the electrons toward the anode,
• introducing atoms of a neutral gas into the cavity,
• providing a substantially constant magnetic field in a direction substantially perpendicular to the electrical field to facilitate the production of charged particles from the atoms of the neutral gas by the electrons and the movement of the charged particles toward the target for the sputtering of atoms from the target and the movement of the sputtered atoms toward the substrate,
• the positive voltage on the anode and the negative voltage on the target having a difference to obtain a deposition of the sputtered atoms on the substrate and a deposition on the walls of the groove in the substrate with particular characteristics,
• the sputtered atoms flowing from the target to the substrate without obstruction from the anode and the production of the magnetic field, and wherein
• the positive voltage on the anode and the negative voltage on the target have values to provide a deposition of the sputtered atoms with a substantially uniform thickness on the substrate and on the walls of the groove in the substrate.

In a method of providing a deposition of sputtered atoms, the steps of:

• providing a planar substrate with a groove in the substrate, the groove being defined by walls, the steps of:
• providing a planar anode in a spaced and substantially parallel relationship to the substrate,
• providing a target in spaced relationship to the anode to define a cavity, the target having a hollow frusto-conical configuration with an axis substantially perpendicular to the planar anode and the planar substrate,
• providing a positive voltage on the anode and, on the target, a voltage negative relative to the positive voltage to establish an electrical field between the anode and the target and to establish a glow discharge between the anode and the target for the emission of electrons from the target and the movement of the electrons toward the anode,
• introducing atoms of a neutral gas into the cavity,
• providing a substantially constant magnetic field in a direction substantially perpendicular to the electrical field to facilitate the production of charged particles from the atoms of the neutral gas by the electrons and the movement of the charged particles toward the target for the sputtering of atoms from the target and the movement of the sputtered atoms toward the substrate,
• the positive voltage on the anode and the negative voltage on the target having a difference to obtain a deposition of the sputtered atoms on the substrate and a deposition on the walls of the groove in the substrate with particular characteristics,
• the sputtered atoms flowing from the target to the substrate without obstruction from the anode and the production of the magnetic field, and wherein
• the positive voltage on the anode and the negative voltage on the target have values to provide a substantial filling of the groove of the substrate with the sputtered atoms and to provide the deposition of the sputtered atoms with a substantially planar surface on the substrate including the filled groove.

In a method of providing a deposition of sputtered atoms, the steps of:

• providing a planar substrate with a groove in the substrate, the groove being defined by walls, the steps of:
• providing a planar anode in a spaced and substantially parallel relationship to the substrate,
• providing a target in spaced relationship to the anode to define a cavity, the target having a hollow frusto-conical configuration with an axis substantially perpendicular to the planar anode and the planar substrate,
• providing a positive voltage on the anode and, on the target, a voltage negative relative to the positive voltage to establish an electrical field between the anode and the target and to establish a glow discharge between the anode and the target for the emission of electrons from the target and the movement of the electrons toward the anode,
• introducing atoms of a neutral gas into the cavity,
• providing a substantially constant magnetic field in a direction substantially perpendicular to the electrical field to facilitate the production of charged particles from the atoms of the neutral gas by the electrons and the movement of the charged particles toward the target for the sputtering of atoms from the target and the movement of the sputtered atoms toward the substrate,
• the positive voltage on the anode and the negative voltage on the target having a difference to obtain a deposition of the sputtered atoms on the substrate and a deposition on the walls of the groove in the substrate with particular characteristics,
• the sputtered atoms flowing from the target to the substrate without obstruction from the anode and the production of the magnetic field, and wherein
• the anode and the target are respectively provided with voltages with a substantially constant difference in magnitude and the positive voltage on the anode has a first value to provide a substantially uniform thickness of the deposition of the sputtered atoms on the substrate and on the walls of the groove and a second value to provide a substantial filling of the groove in the deposition with the sputtered atoms and a substantially smooth surface of the deposition on the substrate and on the filled groove.

In a method of providing a deposition of sputtered atoms, the steps of:

• providing a planar substrate with a groove in the substrate, the groove being defined by walls, the steps of:
• providing a planar anode in a spaced and substantially parallel relationship to the substrate,
• providing a target in spaced relationship to the anode to define a cavity, the target having a hollow frusto-conical configuration with an axis substantially perpendicular to the planar anode and the planar substrate,
• providing a positive voltage on the anode and, on the target, a voltage negative relative to the positive voltage to establish an electrical field between the anode and the target and to establish a glow discharge between the anode and the target for the emission of electrons from the target and the movement of the electrons toward the anode,
• introducing atoms of a neutral gas into the cavity,
• providing a substantially constant magnetic field in a direction substantially perpendicular to the electrical field to facilitate the production of charged particles from the atoms of the neutral gas by the electrons and the movement of the charged particles toward the target for the sputtering of atoms from the target and the movement of the sputtered atoms toward the substrate,
• the positive voltage on the anode and the negative voltage on the target having a difference to obtain a deposition of the sputtered atoms on the substrate and a deposition on the walls of the groove in the substrate with particular characteristics,
• the sputtered atoms flowing from the target to the substrate without obstruction from the anode and the production of the magnetic field, and wherein
• the anode is provided with a positive voltage of approximately forty five volts (45V.) and the target is provided with a negative voltage of approximately four hundred and fifty five volts (−455V.) to produce a deposition of the sputtered atoms with a substantially uniform thickness on the substrate and on the walls of the groove in the substrate.

In a method of providing a deposition of sputtered atoms, the steps of:

• providing a planar substrate with a groove in the substrate, the groove being defined by walls, the steps of:
• providing a planar anode in a spaced and substantially parallel relationship to the substrate,
• providing a target in spaced relationship to the anode to define a cavity, the target having a hollow frusto-conical configuration with an axis substantially perpendicular to the planar anode and the planar substrate,
• providing a positive voltage on the anode and, on the target, a voltage negative relative to the positive voltage to establish an electrical field between the anode and the target and to establish a glow discharge between the anode and the target for the emission of electrons from the target and the movement of the electrons toward the anode,
• introducing atoms of a neutral gas into the cavity,
• providing a substantially constant magnetic field in a direction substantially perpendicular to the electrical field to facilitate the production of charged particles from the atoms of the neutral gas by the electrons and the movement of the charged particles toward the target for the sputtering of atoms from the target and the movement of the sputtered atoms toward the substrate,
• the positive voltage on the anode and the negative voltage on the target having a difference to obtain a deposition of the sputtered atoms on the substrate and a deposition on the walls of the groove in the substrate with particular characteristics,
• the sputtered atoms flowing from the target to the substrate without obstruction from the anode and the production of the magnetic field, and wherein
• the anode is provided with a positive voltage of approximately two hundred volts (200V.) and the target is provided with a negative voltage of approximately three hundred volts (−300 V.) to substantially fill the groove with the deposition of the sputtered atoms and provide a substantially smooth surface of the sputtered atoms on the substrate including the filled groove.

An apparatus for providing a deposition of molecules of aluminum oxide on the surface of a planar substrate, including,

• a planar anode displaced from the substrate and disposed substantially parallel to the substrate,
• a target spaced from the anode and defining a cathode, the target being made from aluminum, the target being hollow and having a substantially frusto-conical inner periphery substantially perpendicular to the anode and the target,
• first means associated with the anode and the cavity for defining a cavity,
• second means for introducing a neutral gas into the cavity,
• third means for providing a positive voltage on the anode and a negative voltage on the target relative to the positive voltage on the anode to establish an electrical field between the anode and the target and to establish a glow discharge between the anode and the target and to obtain an emission of electrons from the target and a movement of such electrons toward the anode,
• fourth means for producing a substantially constant magnetic field in co-operation with the electrical field and substantially perpendicular to the electrical field to obtain a force on the electrons for enhancing the movement of the electrons between the target and the anode and to facilitate an ionization by the electrons of the atoms of the neutral gas in the cavity and an emission of sputtered atoms of aluminum from the surface of the target toward the surface of the substrate, and
• fifth means for introducing a flow of oxygen into the cavity for chemical reaction with the atoms of aluminum to produce molecules of aluminum oxide for deposition on the surface of the substrate,
• the positive voltage on the anode having a first magnitude and the negative voltage on the target having a second magnitude relative to the positive voltage on the anode to provide for a deposition of the aluminum oxide on the substrate with an index of refraction of at least approximately 1.63,
• the index of refraction being provided at an oxygen flow rate maintaining, with changes in the oxygen flow rate, the index of refraction of the aluminum oxide deposited on the substrate at a value of at least approximately 1.63 and preventing any decrease in the magnitude of the voltage on the target.

An apparatus for providing a deposition of molecules of a metallic oxide on the surface of a planar substrate, including,

• a planar anode displaced from the planar substrate and substantially parallel to the planar substrate,
• a target displaced from the anode to define with the anode a cavity for receiving atoms of a neutral gas in the cavity, the target being.made from a metal, the target having a frusto-conical inner periphery substantially perpendicular to the planar anode and
• first means for introducing the atoms of the neutral gas into the cavity,
• second means for providing a positive voltage on the anode and a negative voltage on the cathode relative to the positive voltage on the anode to establish a glow discharge to obtain the emission of electrons from the target and the ionization by such electrons of atoms of the neutral gas in the cavity and the emission of sputtered atoms from the target as a result of the ionization of the neutral gas,
• third means for producing a substantially constant magnetic field in the cavity in a direction substantially perpendicular to the electrical field between the anode and the target to produce a force on the electrons for increasing the distance of travel of the electrons between the anode and the target and for enhancing the ionization of the atoms of the neutral gas in the cavity, and
• fourth means for providing for a flow of oxygen in the cavity for chemical reaction with the sputtered atoms of the metal emitted from the target and the deposition of molecules of the metallic oxide on the substrate,
• the magnitude of the positive voltage on the anode providing, in cooperation with progressive increases in the flow rate of the oxygen into the cavity, for the production of the metallic oxide for deposition on the substrate in a range of progressive indices of refraction.

In a method of depositing a metallic oxide on the surface of a planar substrate, the steps of:

• disposing a planar anode and a target in a relationship to define a cavity with the anode being substantially parallel to the substrate and displaced from the substrate and with the target having a substantially frusto-conical inner periphery with an axis substantially perpendicular to the planar substrate and the planar anode,
• the target being made from a metallic element,
• introducing atoms of a neutral gas into the cavity,
• providing an electrical field between the anode and the target to establish a glow discharge for the production of a flow of electrons from the target to the anode and an ionization of the atoms of the neutral gas in the cavity by the electrons and a movement of the ions toward the target to obtain an emission of atoms of the metallic element from the target and a movement of such atoms toward the substrate,
• providing a substantially constant magnetic field in the cavity in a direction relative to the electrical field for producing a force on the electrons in a direction to enhance the ionization of the atoms of the neutral gas by the electrons,
• providing a flow of oxygen into the cavity to obtain a chemical combination of the molecules of the metallic element and the oxygen to form molecules of the metallic oxide for deposition on the substrate,
• providing a positive voltage on the anode and a negative voltage on the substrate relative to the positive voltage on the anode to obtain a deposition of the metallic oxide on the substrate with at least a particular index of refraction through a particular range of oxygen flow rates, and
• regulating the oxygen flow rate at an intermediate value in the particular range of oxygen flow rates.

In a method of depositing atoms of a particular material, the steps of:

• providing a planar substrate,
• disposing a planar anode and a target in a particular relationship to define a cavity with the planar anode substantially parallel to the planar substrate and displaced from the substrate and with the target having a substantially frusto-conical inner periphery and with the axis of the frusto-conical periphery being substantially perpendicular to the planar anode and the planar substrate,
• introducing atoms of a neutral gas into the cavity,
• providing an electrical field between the anode and the target to establish a glow discharge for the production of a flow of electrons from the target to the anode and an ionization by the electrons of the atoms of the neutral gas in the cavity and a movement of the ions toward the target to obtain an emission of atoms from the target and a movement of such atoms toward the substrate,
• providing a substantially constant magnetic field in the cavity in a direction relative to the electrical field for producing a force on the electrons in a direction to enhance the ionization of the atoms of the neutral gas by the electrons, and
• providing a positive voltage on the anode and a voltage on the substrate lower than the positive voltage on the anode, and
• varying the positive voltage on the anode, while maintaining the voltage on the substrate substantially constant, to produce variations in the rate of the deposition of the sputtered atoms on the substrate in accordance with such voltage variations, and
• with the voltage on the substrate substantially constant at the value lower than the voltage on the anode, the relationship between the variations in the positive voltage on the anode and the rate of the deposition of the sputtered atoms on the substrate being substantially linear.

An apparatus for providing a deposition on a planar substrate, including,

• a planar anode disposed in substantially parallel relationship to the substrate,
• a target displaced from the anode to define with the anode a cavity for receiving atoms of a neutral gas in the cavity, the target having a hollow substantially frusto-conical configuration with an axis substantially perpendicular to the anode,
• first means for introducing atoms of the neutral gas into the cavity,
• second means for providing a positive potential on the anode to establish a glow discharge and an ionization by such glow discharge of atoms of the neutral gas in the cavity,
• third means for providing a negative potential on the target relative to the positive potential on the anode to attract the ions and obtain the emission from the target of sputtered atoms for movement toward the substrate, and
• fourth means for producing a substantially constant magnetic field in the cavity in a direction substantially perpendicular to the electrical field between the anode and the target to produce a force on the electrons for producing a movement of the electrons between the anode and the target other than in a straight line path and for enhancing the ionization of the atoms of the neutral gas in the cavity as a result of such movement,
• the target being at a fixed potential, and
• the positive voltage on the anode being variable to vary the rate of deposition of the sputtered atoms from the target on the substrate in accordance with such voltage variations,
• the anode, the first means, the second means, the third means and the fourth means being disposed relative to the target and the substrate to provide for a flow of the sputtered atoms from the target to the substrate without obstruction, and
• the substrate being at a voltage lower than the positive voltage on the anode,
• there being a substantially linear relationship between the voltage on the anode and the rate of deposition of the sputtered atoms on the substrate with the substantially constant voltage on the substrate at the value lower than the positive voltage on the anode.

An apparatus for providing a deposition of sputtered atoms on a planar substrate, including,

• a planar anode disposed in spaced and substantially parallel relationship to the substrate,
• a target displaced from the anode to define with the anode a cavity for receiving atoms of a neutral gas in the cavity,
• means for introducing the neutral gas into the cavity,
• means for providing a positive voltage on the anode to produce a flow of electrons from the target toward the anode and to establish a glow discharge between the target and the anode and to provide for an ionization by such electrons of atoms of the neutral gas in the cavity and an emission of sputtered atoms from the target to the substrate for a deposition of the sputtered atoms on the substrate,
• means for providing a negative voltage on the target relative to the positive voltage on the anode to attract the ions and obtain the emission from the target of sputtered atoms for movement toward the substrate, the voltages on the anode and the cathode creating an electrical field,
• means for creating a substantially constant magnetic field in the cavity in a direction substantially perpendicular to the electrical field between the anode and the target to create a force on the electrons for a movement of the electrons between the anode and the target through other than a straight line path and to enhance the ionization of the atoms of the neutral gas in the cavity, the magnetic field means being at a voltage less than the positive voltage on the anode,
• there being a voltage difference between the anode and the cathode of a magnitude, and the voltage on the anode having a magnitude, controlling the characteristics of the deposition of the sputtered atoms on the substrate,
• the target having a hollow substantially frusto-conical configuration with an axis substantially perpendicular to the anode and the anode being disposed relative to the hollow frusto-conical configuration of the target to provide for a flow of the sputtered atoms from the target to the substrate without obstruction, and
• the voltage on the anode being at a positive value of approximately forty five volts (+45V.), and the voltage difference between the anode and the target being approximately five hundred volts (500 V.), to provide the deposition of the sputtered atoms on the substrate with characteristics filling the groove and providing a substantially smooth surface on the substrate and on the filled groove of the substrate.

An apparatus for providing a deposition of sputtered atoms on a planar substrate, including,

• a planar anode disposed in spaced and substantially parallel relationship to the substrate,
• a target displaced from the anode to define with the anode a cavity for receiving atoms of a neutral gas in the cavity,
• means for introducing the neutral gas into the cavity,
• means for providing a positive voltage on the anode to produce a flow of electrons from the target toward the anode and to establish a glow discharge between the target and the anode and to provide for an ionization by such electrons of atoms of the neutral gas in the cavity and an emission of sputtered atoms from the target to the substrate for a deposition of the sputtered atoms on the substrate,
• means for providing a negative voltage on the target relative to the positive voltage on the anode to attract the ions and obtain the emission from the target of sputtered atoms for movement toward the substrate, the voltages on the anode and the cathode creating an electrical field,
• means for creating a substantially constant magnetic field in the cavity in a direction substantially perpendicular to the electrical field between the anode and the target to create a force on the electrons for a movement of the electrons between the anode and the target through other than a straight line path and to enhance the ionization of the atoms of the neutral gas in the cavity, the magnetic field means being at a voltage less than the positive voltage on the anode,
• there being a voltage difference between the anode and the cathode of a magnitude, and the voltage on the anode having a magnitude, controlling the characteristics of the deposition of the sputtered atoms on the substrate,
• the target having a hollow substantially frusto-conical configuration with an axis substantially perpendicular to the anode and the anode being disposed relative to the hollow frusto-conical configuration of the target to provide for a flow of the sputtered atoms from the target to the substrate without obstruction, and
• the voltage on the anode being at a positive value of approximately two hundred volts (+200V.) and the voltage difference between the anode and the target being approximately five hundred volts (500 V.), to provide a deposition of a substantially uniform thickness on the substrate and on the walls of the groove in the substrate.