Semiconductor laser device
AssigneeFurukawa Electric Co., Ltd.
InventorsJunji Yoshida, Naoki Tsukiji
Life of this patent
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Abstract
A semiconductor laser device having high optical output power is provided. The semiconductor laser device has an n-type lower cladding layer, a lower optical confinement layer, an active layer having a quantum well structure, an upper optical confinement layer, a Zn-doped p-type upper cladding layer, and a cap layer formed on an n-type semiconductor substrate in this order. A nondoped semiconductor layer having a thickness of 10 to 100 nm, in particular, a nondoped InP layer, is interposed between the upper optical confinement layer and the Zn-doped p-type upper cladding layer.
Claims10
A semiconductor laser device comprising:
- a layered structure having an n-type lower cladding layer, a lower optical confinement layer, an active layer having a quantum well structure, an upper optical confinement layer, a Zn-doped p-type upper cladding layer, and a cap layer grown on an n-type semiconductor substrate in this order, wherein said upper cladding layer is formed by a re-growth process;
- and
- a nondoped semiconductor layer interposed between said upper optical confinement layer and said Zn-doped p-type upper cladding layer,
- wherein said nondoped semiconductor layer has the same band gap composition wavelength of the upper cladding layer and said nondoped semiconductor layer has a thickness of 10 to 100 nm, and
- wherein a total thickness of the upper optical confinement layer and the nondoped semiconductor layer is larger than a thickness of the lower optical confinement layer.
A semiconductor laser device comprising:
- a layered structure having an n-type lower cladding layer, a lower optical confinement layer, an active layer having a quantum well structure, an upper optical confinement layer, a Zn-doped p-type upper cladding layer, and a cap layer grown on an n-type semiconductor substrate in this order, wherein said upper cladding layer is formed by a re-growth process;
- and
- a nondoped semiconductor layer interposed between said upper optical confinement layer and said Zn-doped p-type upper cladding layer,
- wherein said nondoped semiconductor layer is either a layer of a single composition comprised of nondoped InP, or a layer of a single composition comprised of nondoped GaInAsP having a band gap composition wavelength of 0.92 to 1.1 microns, or a composition gradated layer comprised of a plurality of nondoped GaInAsP having different compositions, and
- wherein a total thickness of the upper optical confinement layer and the nondoped semiconductor layer is larger than a thickness of the lower optical confinement layer.
Dependencies are inferred from the claim text.