Surface emitting type semiconductor laser
AssigneeSeiko Epson Corporation
InventorsTakeo Kawase, Takeo Kaneko
Life of this patent
Estimating the term…
Abstract
In order to facilitate control of the polarization plane of a laser beam emerging from a surface-emitting-type semiconductor laser in a specific direction and to suppress occurrence of fluctuations and switching of the polarization plane depending on the optical output and the environmental temperature, a strain generating section (19) is arranged adjacent to a resonator (10B) of a semiconductor laser. The strain generating section (19) impresses anisotropic stress to the resonator (10B) to generate strain, resulting in birefringence and dependence of the gain on the polarization in the resonator (10A). This enables stabilized control of the polarization plane.
Claims5
A surface-emitting-type semiconductor laser, comprising:
- a semiconductive substrate;
- a resonator disposed over and perpendicular to the semiconductive substrate;
- a laser beam from the resonator being emitted perpendicular to a surface of the semiconductive substrate;
- and
- at least one indented strain generating section provided adjacent to the resonator such that strain generated by the at least one indented strain generating section controls a polarization of the laser beam, the at least one indented strain generating section having a height that is substantially equal to a height of said resonator.
Dependencies are inferred from the claim text.