Solid-state imaging device and electronic camera for monitoring quantity of incident light

A solid-state imaging device comprising:

• a charge-transfer portion that generates and stores signal charges in response to light incident on the charge-transfer portion, and transfers the signal charges;
• an output portion that outputs the signal charges, received from the charge-transfer portion, as an electrical signal;
• a semiconductor region, formed adjacent the charge-transfer portion, through which a signal charge flows, the signal charge flowing through the semiconductor region being an excess charge generated by the charge-transfer portion, the semiconductor region also generating a signal charge in proportion to the quantity of light to the semiconductor region;
• and
• a shading membrane having an aperture portion formed on the semiconductor region.

A solid-state imaging device, comprising:

• a charge-transfer portion that generates and stores electrical signal charges in response to light incident on the charge-transfer portion and then transfers the signal charge;
• an output portion that outputs the signal charges, received from the charge-transfer portion, as an electrical signal;
• a plurality of semiconductor regions that generate signal charges in proportion to the quantity of light incident on the semiconductor regions;
• a shading membrane having an aperture portion formed on the semiconductor region;
• and
• a plurality of aperture areas formed from a plurality of apertures from among the aperture portions.

A solid-state imaging device, comprising:

• a plurality of charge-transfer portions that generate and store electrical signal charges in response to light incident on the charge-transfer portions, and that transfer the signal charges;
• an output portion that outputs the signal charges, received from the charge-transfer portions, as an electrical signal;
• a semiconductor region, formed adjacent to the charge-transfer portions, through which an electrical signal charge flows, the signal charge flowing through the semiconductor region being an excess charge generated by the charge-transfer portions, the semiconductor region also generating a signal charge in proportion to the quantity of light incident on the semiconductor region;
• a shading membrane having an aperture portion formed on the semiconductor region;
• and
• a plurality of aperture areas formed from a plurality of apertures from among the aperture portions.

A camera, comprising:

• (a) a solid-state imaging device, comprising:
• a charge-transfer portion that generates and stores electrical signal charges in response to light incident on the charge-transfer portion, and transfers the signal charges;
• an output portion that outputs the signal charges, transferred from the charge-transfer portion, as an electrical signal;
• a semiconductor region that generates an optical current in proportion to the quantity of light incident on the semiconductor region;
• a shading membrane having an aperture portion formed on the semiconductor region;
• and
• a read portion that reads out an optical current, generated by light incident on the semiconductor region through the aperture portion, to the exterior of the semiconductor region;
• and
• (b) a shutter that blocks light incident to the solid-state imaging device;
• (c) a current-integration circuit that converts the optical current read from the read portion into a corresponding voltage;
• (d) a comparator that compares the voltage converted by the current-integration circuit to a reference voltage;
• and
• (e) a controller that determines a timing to close the shutter responsively to the comparison result output by the comparator.

A camera, comprising:

• (a) a solid-state imaging device, comprising:
• a charge-transfer portion that generates and stores electrical signal charges in response to light incident on the charge-transfer portion and transfers the signal charges;
• an output portion that outputs the signal charges, transferred from the charge-transfer portion, as an electrical signal;
• a semiconductor region, formed adjacent the charge-transfer portion, through which a signal charge flows, the signal charge flowing through the semiconductor region being an excess charge generated by the charge-transfer portion, the semiconductor region also generating an optical current in proportion to the quantity of light incident on the semiconductor region;
• a shading membrane having an aperture portion formed on the semiconductor region;
• and
• a read portion that reads out the optical current, generated by light incident to the semiconductor region through the aperture portion, to the exterior of the semiconductor region;
• (b) a shutter that blocks light incident to the solid-state imaging device;
• (c) a current-integration circuit that converts the optical current read from the read portion into a corresponding voltage;
• (d) a comparator that compares the voltage converted by the current-integration circuit to a reference voltage;
• and
• (e) a controller that determines a timing in which to close the shutter in response to the comparison result produced by the comparator.