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US 6,603,316 B2Granted
Semiconductor wafer test system
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorHideo Oishi
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AssigneeMatsushita Electric Industrial Co., Ltd.
InventorHideo Oishi
Estimating the term…
A semiconductor wafer test system for carrying out a burn-in test on a semiconductor wafer including multiple semiconductor devices thereon. A metal interconnect is connected to the gate electrode of each of those devices. A power supply applies an ac voltage of predetermined amplitude to a conductive plate, which creates an ac electric field to be placed on the devices. The ac field should have an intensity at least equal to a minimum value required for the burn-in test and less than a critical value, below which no breakdown occurs in the gate oxide film of each device. By changing the amount of time for which the devices are exposed to the ac field, the burn-in period can be changed freely. In addition, forward and reverse fields are both placed on the gate oxide film of each device. Thus, failures can be screened out very effectively.
A system for carrying out a burn-in test on a great number of semiconductor devices that have been formed on a semiconductor wafer, each said device including a gate oxide film between a substrate and a gate electrode, the gate electrode being connected to a metal interconnect,
A system for carrying out a burn-in test on a great number of semiconductor devices that have been formed on a semiconductor wafer, each said device including a gate oxide film between a substrate and a gate electrode, the gate electrode being connected to a metal interconnect,
A system for carrying out a burn-in test on a great number of semiconductor devices that have been formed on a semiconductor wafer, each said device including a gate oxide film between a substrate and a gate electrode, the gate electrode being connected to a metal interconnect, the system comprising:
A system for performing a burn-in test on a plurality of semiconductor devices formed on a semiconductor wafer, each said device including a gate oxide film disposed between a substrate and a gate electrode, the gate electrode being connected to a metal interconnect,
Dependencies are inferred from the claim text.