Semiconductor device with deliberately damaged layer having a shorter carrier lifetime therein

A semiconductor device comprising:

• a first semiconductor layer of a first conductivity type;
• a second semiconductor layer of said first conductivity type which is formed on a surface of said first semiconductor layer and damaged throughout all regions thereof due to implantation of a predetermined ion selected from the group consisting of a helium ion, a lithium ion, a beryllium ion, a boron ion, a carbon ion, a nitrogen ion, and an oxygen ion;
• and
• a third semiconductor layer of a second conductivity type which is formed on a surface of said second semiconductor layer,
• wherein a second lifetime in said second semiconductor layer is smaller than {fraction (1/10)} a first lifetime in said first semiconductor layer.

A method of manufacturing a semiconductor device comprising:

• a first step of preparing a first semiconductor layer of a first conductivity type having a first lifetime;
• a second step of forming a second semiconductor layer of a second conductivity type on a surface of said first semiconductor layer;
• and
• a third step of forming a low lifetime region extending from said surface of said first semiconductor layer to a predetermined position inside of said first semiconductor layer and having a second lifetime smaller than said first lifetime and a resistance value monotonically decreasing from said surface of said first semiconductor layer.