Semiconductor apparatus including CMOS circuits and method for fabricating the same

A semiconductor apparatus comprising:

• a P-channel MISFET (Metal Insulator Semiconductor Field Effect Transistor) including a first gate insulator which contains first positive charges therein;
• and
• an N-channel MISFET including a second gate insulator which contains second positive charges therein, wherein a first charge density of said first positive charge is larger than a second charge density of said second positive charge, a circuit includes said P-channel MISFET and said N-channel MISFET, an increase in an operating current of said P-channel MISFET is greater than a decrease in another operating current of said N-channel MISFET, threshold voltages of said N-channel MISFET and said P-channel MISFET being determined by varying impurity concentrations therein, said first positive charge and said second positive charge being fixed charges.