Operating circuit with voltage regular circuit having at least a partially depleted soi field effect transistor

A timepiece, comprising:

• a semiconductor integrated circuit including:
• a first power un which supplies a first voltage potential;
• a second power line which supplies a second voltage potential that is lower than the first voltage potential;
• a voltage regulator circuit connected electrically to the first and second power lines;
• a third power line which supplies a constant voltage generated by the voltage regulator circuit, with reference to the first voltage potential;
• and
• an operating circuit connected electrically to the first and third power lines,
• wherein at least one transistor among transistors comprising the voltage regulator circuit is a partially-depleted SOI field-effect transistor in which a body region and a source region are connected electrically, and wherein at least one transistor among transistors comprising the operating circuit is a partially-depleted SOI field-effect transistor in which the body region is in an electrically floating state.

Electronic equipment, comprising:

• a semiconductor integrated circuit including:
• a first power line which supplies a first voltage potential;
• a second power line which supplies a second voltage potential that is lower than the first voltage potential;
• a voltage regulator circuit connected electrically to the first and second power lines;
• a third power un which supplies a constant voltage generated by the voltage regulator circuit, with reference to the first voltage potential;
• and
• an operating circuit connected electrically to the first and third power lines,
• wherein at least one transistor among transistors comprising the voltage regulator circuit is a partially-depleted SOI field-effect transistor in which a body region and a source region are connected electrically, and wherein at least one transistor among transistors comprising the operating circuit is a partially-depleted SOI field-effect transistor in which the body region is in a electrically floating state.

A semiconductor integrated circuit, comprising:

• a first power line which supplies a first voltage potential;
• a second power line which supplies a second voltage potential that is lower than the first voltage potential;
• a first circuit connected electrically to the first and second power lines;
• a third power line which supplies a voltage generated by the first circuit with reference to the first voltage potential;
• and
• a second circuit connected electrically to the first and third power lines,
• wherein at least one transistor among transistors comprising the first circuit is a partially-depleted SOI field-effect transistor in which a body region and a source region are connected electrically;
• and
• wherein at least one transistor among transistors comprising the second circuit is a partially-depleted SOI field-effect transistor in which the body region is in an electrically floating state.

A semiconductor integrated circuit, comprising:

• a digital circuit section;
• an analog circuit section;
• wherein the digital circuit section comprises a plurality of field-effect transistors and at least one transistor is a partially-depleted SOI field-effect transistor in which a body region is in an electrically floating state;
• and
• wherein the analog circuit section comprises a plurality of field-effect transistors and at least one transistor is a partially-depleted SOI field-effect transistor in which a body region and a source region are connected electrically.

A semiconductor integrated circuit, comprising:

• a first power line which supplies a first voltage potential;
• a second power line which supplies a second voltage potential that is lower than the first voltage potential;
• a voltage regulator circuit connected electrically to the first and second power lines;
• a third power line which supplies a constant voltage generated by the voltage regulator circuit, with reference to the first voltage potential;
• and
• an operating circuit connected electrically to the first and third power lines;
• wherein the entire voltage regulator circuit is made of a partially-depleted SOI field-effect transistor in which body region and a source region are connected electrically;
• and
• wherein at least one transistor among transistors comprising the operating circuit is a partially-depleted SOI field-effect transistor in which the body region is in an electrically floating state.

A semiconductor integrated circuit, comprising:

• a first power line which supplies a first voltage potential;
• a second power line which supplies a second voltage potential that is lower than the first voltage potential;
• a voltage regulator circuit connected electrically to the first and second power lines;
• a third power line which supplies a constant voltage generated by the voltage regulator circuit, with reference to the first voltage potential;
• and
• an operating circuit connected electrically to the first and third power lines;
• wherein at least one transistor among transistors comprising the voltage regulator circuit is a partially-depleted SOI field-effect transistor in which a body region and a source region are connected electrically;
• and
• wherein the entire operating circuit is made of a partially-depleted SOL field-effect transistor in which the body region is in an electrically floating state.