Semiconductor device and method of manufacturing the same
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsMizuki Segawa, Toshiki Yabu, Akira Matsuzawa
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AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsMizuki Segawa, Toshiki Yabu, Akira Matsuzawa
Estimating the term…
An isolation is formed in a part of a P-well of a semiconductor substrate. A resistor film as a first conductor member is formed on the isolation. An insulating film covering the resistor film except for contact formation regions and an upper electrode film as a second conductor member are formed simultaneously with the formation of a gate electrode and a gate oxide film. Silicide films of a refractory metal are formed on the respective surfaces of the gate electrode, N-type high-concentration diffusion layers, the contact formation regions of the resistor film, and the upper electrode film. By utilizing a salicide process, a resistor and an inductor each occupying a small area can be formed without lowering the resistance of the resistor film. A capacitor, the resistor, and like component are selectively allowed to function.
A semiconductor device comprising:
A semiconductor device comprising:
A semiconductor device comprising:
Dependencies are inferred from the claim text.