Semiconductor device and method for fabricating the same

Abstract

The semiconductor device comprises a semiconductor substrate 10; a capacitor element 40 formed above the semiconductor substrate and including a lower electrode 34, a capacitor insulation film 36 formed on the lower electrode and an upper electrode 38 formed on the capacitor insulation film; a shield layer 14, 58 formed at least either of above and below the capacitor element; and a lead-out interconnection layer 22, 50 formed between the capacitor element and the shield layer and electrically connected to the lower electrode or the upper electrode, a plurality of holes 16, 60 being formed in each of the shield layer and the lead-out interconnection layer. The shield layers are formed above and below the MIM capacitor, whereby combination of noises with the MIM capacitor can be prevented.

Dependencies are inferred from the claim text.