Semiconductor device with capacitor and method of manufacturing thereof
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsKatsunobu Hori, Takeshi Matsunuma, Kenichiro Shiozawa, Moriaki Akazawa
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Abstract
A semiconductor device having a capacitor and a method of manufacturing thereof are provided, securing a certain capacitance while allowing the size to be reduced. The semiconductor device includes a capacitor lower electrode having an upper surface and including a metal film, a dielectric film deposited on the upper surface of the capacitor lower electrode and having its thickness smaller than that of the capacitor lower electrode, and a capacitor upper electrode deposited on the dielectric film, having its width smaller than that of the capacitor lower electrode and including a metal film.
Claims4
A semiconductor device comprising:
- a capacitor lower electrode having an upper surface and formed from a metal film layer;
- a dielectric film deposited on the upper surface of said capacitor lower electrode and having its thickness smaller than that of said capacitor lower electrode;
- a capacitor upper electrode deposited on said dielectric film, having its width smaller than that of said capacitor lower electrode and including a metal film, wherein said capacitor upper electrode has a sidewall;
- a sidewall insulating film formed on the upper surface of said capacitor lower electrode and on the sidewall of said capacitor upper electrode;
- and
- an interconnection layer formed from the same metal film layer as the capacitor lower electrode.
Dependencies are inferred from the claim text.