Back to results
US 6,603,160 B1Granted
MOS capacitor, liquid crystal display, integrated circuit and method of manufacture thereof
AssigneeFujitsu Display Technologies Corporation
InventorHongyong Zhang
Life of this patent
Estimating the term…
Abstract
A MOS capacitor used in an active matrix liquid crystal display is manufactured by a process comprising the steps of forming capacitor electrodes with a dielectric layer between them in a semiconductor layer, forming a p+ diffused region and an n+ diffused region adjacent to the capacitor electrodes in the semiconductor layer, and making a complementary connection between the regions.
Claims14
A MOS-type capacitance device, comprising:
- a substrate,
- an electrode formed on the substrate,
- an insulating film formed on the substrate so as to cover the electrode,
- semiconductor layer formed on the insulating film,
- a first diffusion region formed in the semiconductor layer adjacent to a first edge of the electrode, and
- a second diffusion region formed in the semiconductor layer adjacent to another edge of the electrode,
- the first diffusion region being doped to a first conductivity type, the second diffusion region being doped to a second, opposite conductivity type,
- wherein the electrode is connected to a first input terminal,
- wherein the first and second diffusion regions are connected commonly to a second input terminal.
6 more elements
A liquid crystal display device, comprising:
- first glass substrate,
- second glass substrate opposing the first glass substrate,
- a liquid crystal layer confined between the first glass substrate and the second glass substrate,
- a signal electrode extending on the first glass substrate,
- a scanning electrode extending on the first glass substrate,
- a common potential line extending on the first glass substrate,
- a thin-film transistor formed at an intersection of the signal electrode line and the scanning electrode,
- a pixel electrode electrically connected to the thin-film transistor, and
- an accumulating capacitance connected to the pixel electrode,
- the thin-film transistor being formed by a semiconductor layer formed on the first glass substrate,
- the accumulating capacitance comprising:
- an insulating film formed on the semiconductor layer,
- a capacitor electrode formed on the insulating film,
- a first diffusion region formed in the semiconductor layer adjacent to the capacitor electrode, and
- a second diffusion region formed in the semiconductor layer adjacent to the capacitor electrode,
- the first diffusion region being doped to a first conductivity type, the second diffusion region being doped to a second, opposite conductivity type;
- wherein the capacitor electrode is connected to a first input terminal,
- wherein the first and second diffusion regions are connected commonly to a second input terminal.
15 more elements
A projection-type liquid crystal display device, comprising:
- an optical source,
- a liquid crystal panel disposed in an optical path of an optical beam produced by the optical source for spatial modulation, and
- a projecting optical system projecting the optical beam that has been spatially modulated by the liquid crystal panel,
- the liquid crystal panel comprising:
- a first glass substrate,
- a second glass substrate opposing the first glass substrate,
- a liquid crystal layer confined between the first glass substrate and the second glass substrate,
- a signal electrode extending on the first glass substrate,
- a scanning electrode extending on the second glass substrate,
- a common potential line extending on the first glass substrate,
- a thin-film transistor formed at an intersection of the signal electrode line and the scanning electrode,
- a pixel electrode electrically connected to the thin-film transistor, and
- an accumulating capacitance connected to the pixel electrode,
- the thin-film transistor being formed by a semiconductor layer formed on the first glass substrate,
- the accumulating capacitance comprising:
- an insulating film formed on the semiconductor layer,
- a capacitor electrode formed on the insulating film,
- a first diffusion region formed in the semiconductor layer adjacent to the capacitor electrode, and
- a second diffusion region formed in the semiconductor layer adjacent to the capacitor electrode,
- the first diffusion region being doped to a first conductivity type, the second diffusion region being doped toga second, opposite conductivity type,
- wherein the capacitor electrode is connected to a first input terminal,
- wherein the first and second diffusion regions are connected commonly to a second input terminal.
19 more elements
Dependencies are inferred from the claim text.