Gallium nitride group compound semiconductor light-emitting device
AssigneeSharp Kabushiki Kaisha
InventorsToshio Hata, Taiji Morimoto, Takeshi Kamikawa, Kensaku Yamamoto
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Abstract
A semiconductor light-emitting device includes: a substrate; a semiconductor layer including at least one light-emitting region; a metal layer having a light transmitting characteristic; a first fluorescent material layer for converting at least a portion of first light emitted from the light-emitting region into second light having a different wavelength from the first light; and an oxide semiconductor layer formed between the metal layer and the first fluorescent material layer, and having a light-transmitting characteristic.
Claims23
A semiconductor light-emitting device comprising:
- a substrate;
- a semiconductor layer including at least a light-emitting region;
- a metal layer having a light transmitting characteristic on the semiconductor layer;
- a fluorescent material layer for converting at least a portion of first light emitted from the light-emitting region into second light having a different wavelength from the first light;
- and
- an oxide semiconductor layer formed between and directly contacting the metal layer and the fluorescent material layer, and having a light-transmitting characteristic,
- wherein the first light transmitting into the fluorescent material layer to convert the wavelength is light transmitted through the metal layer, wherein:
- a bottom surface area of the metal layer is smaller than a bottom surface area of the oxide semiconductor layer;
- and
- the fluorescent material layer covers a side face of the oxide semiconductor layer and a side face of the semiconductor layer.
A semiconductor light-emitting device comprising:
- a substrate;
- a semiconductor layer including at least a light-emitting region on the substrate;
- a metal layer having a light transmitting characteristic on the semiconductor layer;
- an oxide semiconductor layer formed directly on the metal layers and
- a fluorescent material layer on the oxide semiconductor layer so as to cover the top and side faces thereof, the fluorescent material layer for converting at least a portion of first light emitted from the light-emitting region into second light having a different wavelength from the first light;
- wherein the oxide semiconductor layer is positioned between the fluorescent material layer and the metal layer, and has a light-transmitting characteristic, and
- wherein a bottom surface area of the metal layer is smaller than a bottom surface area of the oxide semiconductor layer.
Dependencies are inferred from the claim text.