Solid-state imaging device and method for fabricating same
AssigneeNEC Electronics Corporation
InventorShiro Tsunai
Life of this patent
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Abstract
P-type ion implantation is done in N well 15, so as to form a charge drain control layer 17 and form a photodiode N well 16 and OFD drain 5, the result being that, even if there is variation in the potential of the photodiode N well 16 making up the photodiode, because the variation in the potential of the charge drain control layer 17 is in the same direction as the potential of the photodiode N well 16, so that variation does not occur in the maximum amount of electrical charge that can be accumulated, the result being that there is no variation in the signal in the saturation condition.
Claims6
A solid-state imaging device comprising;
- an opto-electrical conversion well of a first conductivity type formed on a substrate,
- a separation layer of a second conductivity type to separate said opto-electrical conversion well of said first conductivity type so as to form a plurality of photodiodes,
- a cap layer of said second conductivity type formed on a surface of said opto-electrical conversion well,
- a charge drain control layer of said second conductivity type formed within said opto-electrical conversion well of said first conductivity type,
- a photodiode well and a charge drain well of said photodiode formed by providing said charge drain control layer, formed within said opto-electrical conversion well of said first conductivity type.
Dependencies are inferred from the claim text.