Organic semiconductor and method

A MESFET comprising:

• a substrate;
• an organic semiconductor layer;
• a gate printed on the substrate wherein the gate is at least partially in contact with the organic semiconductor layer and wherein the gate is comprised of a material having a work function selected such that an interface between the gate and the organic semiconductor layer comprises a Schottky junction;
• a drain printed on the substrate wherein the drain is at least partially in contact with the organic semiconductor layer and wherein the drain is comprised of material such that an interface between the drain and the organic semiconductor layer comprises an ohmic contact;
• a source printed on the substrate wherein the source is at least partially in contact with the organic semiconductor layer and wherein the source is comprised of material such that an interface between the source and the organic semiconductor layer comprises an ohmic contact.

A method of forming a MESFET comprising:

• providing a substrate;
• forming a gate electrode on the substrate;
• forming a drain electrode and source electrode on the substrate;
• forming an organic semiconductor layer over at least a portion of the gate electrode, drain electrode, and source electrode to thereby form a Schottky junction with the gate electrode and an ohmic contact between:
• the organic semiconductor and the drain electrode;
• and
• the organic semiconductor and the source electrode.