Quantum-confinement stark effect optical modulator
AssigneeFurukawa Electric Co., Ltd.
InventorsSatoshi Arakawa, Akihiko Kasukawa
Life of this patent
Estimating the term…
Abstract
A quantum confinement Stark effect (QCSE) optical modulator has a ridge stripe including a current confinement structure. The current confinement structure includes an AlInAs layer which is subjected to selective oxidation of Al content in the AlInAs layer. The current confinement structure is such that a pair of Al-oxidized regions of the AlInAs layer sandwiches therebetween a central un-oxidized region.
Claims9
A quantum confinement Stark effect (QCSE) optical modulator comprising a compound semiconductor substrate, and a layer structure formed thereon, said layer structure including an AlGaInAs-based multiple quantum well (MQW), a pair of cladding layers having opposite conductivity types and sandwiching therebetween said MQW, and an Al-containing layer overlying said MQW or formed within one of said cladding layers having a p-type conductivity, said layer structure being configured as a ridge stripe at a portion including said Al-containing layer, said Al-containing layer having a current confinement structure wherein a pair of Al-oxidized regions of said Al-containing layer sandwiches therebetween a central un-oxidized region of said Al-containing layer.
Dependencies are inferred from the claim text.