Test method of mask for electron-beam exposure and method of electron-beam exposure

A test method of a mask for electron-beam exposure which has a pattern region in which, by forming an electron-beam scatterer in prescribed shape on an electron-beam transmittable thin film, a scattering region with said electron-beam scatterer and a membrane region without said electron-beam scatterer are formed in prescribed pattern shape;

• wherein
• electron-beam irradiation onto a tested mask is carried out in a plurality of times, with each irradiated region subjected to irradiation at a time being scanned with the electron beam, and through detection of transmitted electrons which is made for each irradiated region subjected to irradiation at a time, the value for ITE/α given by dividing a cumulative intensity of the transmitted electrons ITE for an irradiated region subjected to irradiation at a time by a pattern density α of a membrane region within said irradiated region is obtained for each one of a plurality of irradiated regions, whereby data of a relative film thickness distribution for the membrane regions in the mask face are acquired.