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US 6,602,804 B2Granted
Porous materials
AssigneeShipley Company, L.L.C.
InventorsCraig S. Allen, Nikoi Annan, Robert M. Blankenship, Michael K. Gallagher, Robert H. Gore, Angelo A. Lamola, Yujian You
Life of this patent
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Abstract
Porous dielectric materials having low dielectric constants useful in electronic component manufacture are disclosed along with methods of preparing the porous dielectric materials. Also disclosed are methods of forming integrated circuits containing such porous dielectric materials.
Claims17
A method of manufacturing an integrated circuit comprising the steps of:
- a) depositing on a substrate a layer of a composition comprising polymerizable B-staged dielectric material having cross-linked polymeric porogen particles having a mean particle size of 1 to 200 nm dispersed therein;
- b) curing the B-staged dielectric material to form a dielectric matrix material without substantially removing the porogen particles;
- and c) subjecting the dielectric matrix material to conditions which at least partially remove the porogen particles to form a porous dielectric material layer without substantially degrading the dielectric material;
- wherein the porogen particles contain from 1 to 100% cross-linking agent based on the weight of the porogen, wherein the porogen particles are not reacted with the B-staged dielectric material, and wherein the porogen particles are soluble or miscible in the B-staged dielectric material, the solvent used to dissolve the B-staged dielectric material, or both.
1 more element
A method of manufacturing an integrated circuit comprising the steps of:
- a) depositing on a substrate a layer of a composition comprising removable cross-linked polymeric porogen particles and a polymerizable B-staged dielectric material comprising hydrogensilsesquioxane;
- b) curing the B-staged dielectric material to form a dielectric matrix material without substantially degrading the porogen particles;
- and
- c) subjecting the dielectric matrix material to conditions which at least partially remove the porogen particles to form a porous dielectric material without substantially degrading the dielectric material;
- wherein the polymeric porogen particles have a mean particle size of 1 to 1000 nm, contain from 1 to 100% cross-linking agent based on the weight of the porogen and are soluble or miscible in the B-staged dielectric material, the solvent used to dissolve the B-staged dielectric material, or both.
2 more elements
Dependencies are inferred from the claim text.