Method for forming a region of low dielectric constant nanoporous material
AssigneeChartered Semiconductor Manufacturing Ltd.
InventorsSiew Yong Kong, Alex See, Simon Chooi, Gautam Sarkar
Life of this patent
Estimating the term…
Loading patent…
AssigneeChartered Semiconductor Manufacturing Ltd.
InventorsSiew Yong Kong, Alex See, Simon Chooi, Gautam Sarkar
Estimating the term…
A method for forming a region of low dielectric constant nanoporous material is disclosed. In one embodiment, the present method includes the step of combining a plurality of materials to form a solution. In the present embodiment, the plurality of materials comprising a low dielectric constant material, a pore generator material, and a solvent. In this embodiment, the present method then applies the solution to a surface above which it is desired to form the region of low dielectric constant nanoporous material. Next, the present embodiment subjects the solution, which has been applied to the surface, to a thermal process such that a region of low dielectric constant nanoporous material is formed above the surface.
A method for forming a region of low dielectric constant nanoporous material, said method comprising the steps of:
A method for forming a region of low dielectric constant nanoporous material, said method comprising the steps of:
Dependencies are inferred from the claim text.