Apparatus for forming thin film on semiconductor substrate by plasma reaction
AssigneeASM Japan K.K.
InventorNobuo Matsuki
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Abstract
A plasma CVD apparatus for forming a thin film on a semiconductor substrate by plasma reaction includes: (i) a reaction chamber; (ii) a reaction gas inlet for introducing a reaction gas into the reaction chamber; (iii) a lower stage on which a semiconductor substrate is placed in the reaction chamber; (iv) an upper electrode for plasma excitation in the reaction chamber; and (v) an electrically conductive intermediate plate with plural pores disposed between the upper electrode and the lower stage. The intermediate plate divides the interior of the reaction chamber into an upper region and a lower region, wherein the lower region has no significant presence of plasma.
Claims6
A plasma CVD apparatus for forming a thin film on a semiconductor substrate by plasma reaction, comprising:
- a reaction chamber;
- a reaction gas inlet for introducing a reaction gas into the reaction chamber;
- a lower stage on which a semiconductor substrate is placed in the reaction chamber;
- an upper electrode far plasma excitation in the reaction chamber and
- an electrically conductive intermediate plate with plural pores disposed between the upper electrode and the lower stage, said intermediate plate dividing the interior of the reaction chamber into an upper region and a lower region, wherein the lower region has no significant presence of plasma.
Dependencies are inferred from the claim text.