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US 6,602,796 B2Granted
Chemical vapor deposition for smooth metal films
AssigneeMicron Technology, Inc.
InventorsGaro J. Derderian, Gurtej Singh Sandhu
Life of this patent
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Abstract
A method for growing smooth metal films using a first process phase favorable to nucleation, agglomeration and initiation of smooth metal film growth and a second process phase favorable to continued smooth metal film growth, a system for performing the method, and semiconductor devices so produced.
Claims31
A method of forming a single element metal film, comprising:
- depositing a single element metal film by chemical reaction at a first set of process conditions, the first set of process conditions producing a grain size in the single element metal film;
- allowing for development of a continuous film;
- and
- continuing to deposit the single element metal film by chemical reaction, at a second set of process conditions, wherein the second set of process conditions differs from the first set of process conditions, wherein the second set of process conditions preserves the grain size.
1 more element
A method of forming a single element metal film, comprising:
- depositing a single element metal film by chemical reaction at a first set of process conditions, the first set of process conditions producing a grain size in the single element metal film;
- allowing for development of a continuous film;
- continuing to deposit the single element metal film by chemical reaction, at a second set of process conditions, wherein the second set of process conditions differs from the first set of process conditions, wherein the second set of process conditions preserves the grain size;
- and
- wherein depositing the metal film at the first set of process conditions comprises operating at a first temperature, a first pressure and a first oxidizer concentration;
- and wherein continuing to deposit the metal film at the second set of process conditions comprises operating at a second temperature, a second pressure and a second oxidizer concentration.
3 more elements
A method of forming a single element metal film, comprising:
- depositing a single element metal film by chemical reaction at a first set of process conditions, the first set of process conditions producing a grain size in the single element metal film;
- allowing for development of a continuous film;
- continuing to deposit the single element metal film by chemical reaction, at a second set of process conditions, wherein the second set of process conditions differs from the first set of process conditions, wherein the second set of process conditions preserves the grain size;
- and
- wherein depositing the metal film at the first set of process conditions comprises operating at a first temperature, a first pressure and a first oxidizer concentration;
- and
- wherein continuing to deposit the metal film at the second set of process conditions comprises operating at a second temperature, a second pressure and a second oxidizer concentration;
- and
- wherein operating at the second pressure comprises operating at a pressure altered from the first pressure.
6 more elements
A method of forming a single element metal film, comprising:
- depositing a single element metal film by chemical reaction at a first set of process conditions, the first set of process conditions producing a grain size in the single element metal film;
- allowing for development of a continuous film;
- continuing to deposit the single element metal film by chemical reaction, at a second set process conditions, wherein the second set of process conditions differs from the first set of process conditions, wherein the second set of process conditions preserves the grain size;
- and
- wherein depositing the metal film at the first set of process conditions comprises operating at a first temperature, a first pressure and a first oxidizer concentration;
- wherein continuing to deposit the metal film at the second set of process conditions comprises operating at a second temperature, a second pressure and a second oxidizer concentration;
- and
- wherein operating at the second oxidizer concentration comprises operating at an oxidizer concentration altered from the first oxidizer concentration.
5 more elements
A method of forming a metal film, comprising:
- depositing a single element metal film by chemical reaction at a first set of process conditions, wherein the first set of process conditions comprises a first temperature, a first pressure and a first oxidizer concentration, the first set of process conditions producing a grain size in the single element metal film;
- allowing for development of a continuous film;
- and
- continuing to deposit the single element metal film by chemical reaction, at a second set of process conditions until the single element metal film reaches a thickness above about 200 Å, wherein the second set of process conditions preserves the grain size, wherein the second set of process conditions comprises a second temperature, a second pressure and a second oxidizer concentration, further wherein at least one of the process conditions of the second set of process conditions is altered from its corresponding process condition of the first set of process conditions.
1 more element
A method of forming a metal film, comprising:
- depositing a single element metal film by chemical reaction at a first set of process conditions, wherein the first set of process conditions comprises a first temperature, a first pressure and a first oxidizer concentration, the first set of process conditions producing a grain size in the single element metal film;
- allowing for development of a continuous film;
- continuing to deposit the single element metal film by chemical reaction, at a second set of process conditions until the single element metal film reaches a thickness above about 200 Å, wherein the second set of process conditions preserves the grain size, wherein the second set of process conditions comprises a second temperature, a second pressure and a second oxidizer concentration, further wherein at least one of the process conditions of the second set of process conditions is altered from its corresponding process condition of the first set of process conditions;
- and
- wherein depositing the metal film comprises depositing a film of platinum.
2 more elements
A method of forming a metal film, comprising:
- depositing a platinum film by chemical reaction at a first set of process conditions, wherein the first set of process conditions comprises a first temperature, a first pressure and a first oxidizer concentration, the first set of process conditions producing a grain size in the single element metal film;
- allowing for development of a continuous film;
- and
- continuing to deposit the platinum film by chemical reaction at a second set of process conditions until the platinum film reaches a thickness above about 200 Å, wherein the second set of process conditions preserves the grain size, wherein the second set of process conditions comprises a second temperature, a second pressure and a second oxidizer concentration, further wherein at least one of the process conditions of the second set of process conditions is altered from its corresponding process condition of the first set of process conditions, still further wherein continuing to deposit the platinum film at a second set of process conditions is initiated before the platinum film reaches a thickness of about 200 Å.
1 more element
Dependencies are inferred from the claim text.