Silylation process for forming contacts
AssigneeAdvanced Micro Devices, Inc.
InventorJongwook Kye
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Abstract
A method of forming narrow trenches in a layer of photoresist is disclosed. The method includes providing a photoresist layer and patterning the photoresist layer to form a plurality of apertures having sidewalls. The method can also include silylating the sidewalls of the apertures in the photoresist layer and reflowing the photoresist layer. The process can be utilized to form contacts having widths which are less than one lithographic feature wide.
Claims20
A method of fabricating an integrated circuit, the method comprising:
- providing a photoresist layer over a semiconductor substrate;
- forming an aperture in the photoresist layer, the aperture having a width;
- silylating the photoresist layer, whereby the width of the aperture is decreased;
- and
- reflowing the photoresist layer, whereby the width of aperture is further decreased.
A method of fabricating a contact for an integrated circuit, the method comprising:
- providing a photoresist layer over an insulating layer above a substrate;
- patterning the photoresist layer to remove a portion;
- silylating the photoresist layer;
- and
- reflowing the photoresist layer.
A method of forming narrow trenches in a layer of photoresist, the method comprising:
- providing a photoresist layer;
- patterning the photoresist layer to form a plurality of apertures having sidewalls;
- silylating the sidewalls of the apertures in the photoresist layer;
- and
- reflowing the photoresist layer.
Dependencies are inferred from the claim text.