Pre-clean chamber
AssigneeNewport Fab, LLC
InventorSean Masterson
Life of this patent
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AssigneeNewport Fab, LLC
InventorSean Masterson
Estimating the term…
An improved pre-clean chamber of a semiconductor processing system minimizes the generation of particulates during processing, thereby decreasing contamination levels that can adversely affect plasma vapor deposition film properties while also decreasing operational costs. The pre-clean chamber comprises an insulator collar that insulates the outside diameter surface of a wafer pedestal, thereby mitigating the etching of the wafer pedestal during etching. The pre-clean chamber further comprises a gas trench cover that directs a suitable etching gas from a gas inlet trench into streams that are focused up and towards the center of the chamber to reduce the extent to which gas bombards the chamber cover. The pre-clean chamber also comprises a bellows cover which protects the bellows of a wafer lift during etching, further reducing the dislodgment of particulates during etching.
A pre-clean chamber for receiving a gas for etching a semiconductor wafer wherein said pre-clean chamber has a chamber wall and a chamber cover and further comprises:
A wafer processing apparatus having a transfer chamber and a plurality of peripheral chambers positioned around the periphery of said transfer chamber, the improvement which comprises:
A pre-clean chamber for receiving a gas for etching a semiconductor wafer wherein said pre-clean chamber has a chamber wall and a chamber cover and further comprises:
A wafer support apparatus for supporting a semiconductor wafer during plasma etching comprising:
A pre-clean chamber for receiving a gas for etching a semiconductor wafer wherein said pre-clean chamber has a chamber wall and a chamber cover and further comprises:
A wafer processing apparatus having a transfer chamber and a plurality of peripheral chambers positioned around the periphery of said transfer chamber, the improvement which comprises:
A wafer support apparatus for supporting a semiconductor wafer during plasma etching comprising:
Dependencies are inferred from the claim text.